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Title: Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1260846
Grant/Contract Number:
EEC-1041895
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Volume: 49; Journal Issue: 30; Related Information: CHORUS Timestamp: 2017-06-24 13:58:35; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Kim, Yeongho, Faleev, Nikolai N., Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, and Honsberg, Christiana B. Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well. United Kingdom: N. p., 2016. Web. doi:10.1088/0022-3727/49/30/305102.
Kim, Yeongho, Faleev, Nikolai N., Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, & Honsberg, Christiana B. Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well. United Kingdom. doi:10.1088/0022-3727/49/30/305102.
Kim, Yeongho, Faleev, Nikolai N., Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, and Honsberg, Christiana B. 2016. "Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well". United Kingdom. doi:10.1088/0022-3727/49/30/305102.
@article{osti_1260846,
title = {Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well},
author = {Kim, Yeongho and Faleev, Nikolai N. and Ban, Keun-Yong and Kim, Jun Oh and Lee, Sang Jun and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1088/0022-3727/49/30/305102},
journal = {Journal of Physics. D, Applied Physics},
number = 30,
volume = 49,
place = {United Kingdom},
year = 2016,
month = 7
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1088/0022-3727/49/30/305102

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  • Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10 μm. Eight-band k·p approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSbmore » and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.« less
  • The optical and structural properties of In{sub 0.15}Ga{sub 0.85}As/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells with embedded InAs quantum dots (QDs) were investigated by the photoluminescence (PL), its temperature dependence, X-ray diffraction (XRD), and high resolution (HR-XRD) methods in dependence on the composition of capping In{sub x}Al{sub y}Ga{sub z}As layers. Three types of capping layers (Al{sub 0.3}Ga{sub 0.7}As, Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As, and Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As) have been used and their impact on PL parameters has been compared. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10–500 K and to compare with the temperaturemore » shrinkage of band gap in the bulk InAs crystal. This permits to investigate the QD material composition and the efficiency of Ga(Al)/In inter diffusion in dependence on the type of In{sub x}Al{sub y}Ga{sub z}As capping layers. XRD and HR-XRD used to control the composition of quantum well layers. It is shown that QD material composition is closer to InAs in the structure with the Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As capping layer and for this structure the emission 1.3 μm is detected at 300 K. The thermal decay of the integrated PL intensity has been studied as well. It is revealed the fast 10{sup 2}-fold thermal decay of the integrated PL intensity in the structure with the Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As capping layer in comparison with 10-fold decay in other structures. Finally, the reasons of PL spectrum transformation and the mechanism of PL thermal decay for different capping layers have been analyzed and discussed.« less
  • Using an atomistic pseudopotential approach, we have contrasted the (i) strain profiles, (ii) strain-modified band offsets, (iii) energies of confined electrons and holes, and (iv) wave functions and Coulomb interactions between electrons and holes for three types of InAs quantum dots: (a) a free-standing spherical dot, (b) a GaAs-embedded spherical dot, and (c) a GaAs-embedded pyramidal dot. A comparison of (a) and (b) reveals the effects of strain, while a comparison of (b) and (c) reveals the effects of shape. We find that the larger band offsets in the {open_quotes}free-standing{close_quotes} dots (i) produce greater quantum confinement of electrons and holesmore » and (ii) act to confine the wave functions more strongly within the dot, resulting in larger electron-hole Coulomb energies. The lower symmetry of the pyramidal dot produces a richer strain profile than the spherical dots, which splits the degeneracy of the hole states and polarizes the emitted light. {copyright} {ital 1999} {ital The American Physical Society}« less
  • The properties of the traps induced by InAs quantum dots (QDs), embedded in a GaAs layer grown by molecular beam epitaxy, are investigated by the low-frequency noise measurements using the Au/n-GaAs Schottky diode as a test device. The forward current noise spectra are composed of two noise components: a 1/f-like noise at low frequencies and a generation-recombination (g-r) noise at higher frequencies. The 1/f noise is ascribed to the mobility fluctuations within the space-charge region. The obtained Hooge parameter ({alpha}{sub H}=6x10{sup -5}) is larger than the expected value considering the phonon or impurity scattering mechanism, indicating the presence of themore » defects associated with QDs. The analysis of the g-r noise gives a single trap of density of about 1.6x10{sup 14} cm{sup -3} in the part of the GaAs layer located above the QDs.« less
  • We have investigated a growth technique to realize high-quality multiple stacking of self-assembled InAs quantum dots (QDs) on GaAs (001) substrates, in which GaN{sub x}As{sub 1-x} dilute nitride material was used as a strain compensation layer (SCL). The growth was achieved by atomic hydrogen-assisted rf molecular beam epitaxy, and the effect of strain compensation was systematically investigated by using high-resolution x-ray diffraction measurements. By controlling the net average lattice strain to a minimum by covering each QD layer with a 40-nm-thick GaN{sub 0.005}As{sub 0.995} SCL, we obtained a superior QD structure with no degradation in size homogeneity. Further, no dislocationsmore » were generated even after 30 layers of stacking, and the area density of QDs amounted to as high as 3x10{sup 12} cm{sup -2}. The photoluminescence peak linewidth was improved by about 22% for QDs embedded in GaNAs SCLs as the accumulation of lattice strain with increasing growth of QD layers was avoided, which would otherwise commonly lead to degradation of size homogeneity and generation of dislocations.« less