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Title: Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

Abstract

Here, we present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

Authors:
 [1];  [1];  [2];  [3];  [3];  [3];  [3];  [4];  [4];  [4];  [4];  [4];  [5];  [5]
  1. Aarhus Univ., Aarhus (Denmark)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Univ. of Ferrara and INFN Section of Ferrara, Ferrara (Italy)
  5. California Polytechnic State Univ., San Luis Obispo, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260299
Report Number(s):
AC02-76SF00515
Journal ID: ISSN 2469-9888; PRABFM
Grant/Contract Number:
AC02-76SF00515; PHY-1068662
Resource Type:
Journal Article: Published Article
Journal Name:
Physical Review Accelerators and Beams (Online)
Additional Journal Information:
Journal Name: Physical Review Accelerators and Beams (Online); Journal Volume: 19; Journal Issue: 7; Journal ID: ISSN 2469-9888
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. C., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., and Tucker, S.. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. United States: N. p., 2016. Web. doi:10.1103/PhysRevAccelBeams.19.071001.
Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. C., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., & Tucker, S.. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. United States. doi:10.1103/PhysRevAccelBeams.19.071001.
Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. C., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., and Tucker, S.. 2016. "Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal". United States. doi:10.1103/PhysRevAccelBeams.19.071001.
@article{osti_1260299,
title = {Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal},
author = {Wistisen, T. N. and Uggerhoj, U. I. and Wienands, U. and Markiewicz, T. W. and Noble, R. J. and Benson, B. C. and Smith, T. and Bagli, E. and Bandiera, L. and Germogli, G. and Guidi, V. and Mazzolari, A. and Holtzapple, R. and Tucker, S.},
abstractNote = {Here, we present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.},
doi = {10.1103/PhysRevAccelBeams.19.071001},
journal = {Physical Review Accelerators and Beams (Online)},
number = 7,
volume = 19,
place = {United States},
year = 2016,
month = 7
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevAccelBeams.19.071001

Citation Metrics:
Cited by: 3works
Citation information provided by
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  • We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distributionmore » of channeled particles parallel and orthogonal to the plane.« less
  • Here, we present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, themore » surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.« less
  • High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact whenmore » compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.« less
  • The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of the CERN Super Proton Synchrotron. Such a process was observed for a wide interval of crystal orientations relative to the beam axis, and its efficiency exceeds 95%, thereby surpassing any previously observed value. These observations suggest new perspectives for the manipulation of high-energy beams, e.g., for collimation and extraction in new-generation hadron colliders, such as the CERN Large Hadron Collider.
  • A high performance apparatus has been designed and built by the H8-RD22 collaboration for the study of channeling and volume reflection phenomena in the interaction of 400 GeV/c protons with bent silicon crystals, during the 2006 data taking in the external beamline H8 of the CERN SPS. High-quality silicon short crystals were bent by either anticlastic or quasimosaic effects. Alignment with the highly parallel (8 {mu}rad divergence) proton beam was guaranteed through a submicroradian goniometric system equipped with both rotational and translational stages. Particle tracking was possible by a series of silicon microstrip detectors with high-resolution and a parallel platemore » gas chamber, triggered by various scintillating detectors located along the beamline. Experimental observation of volume reflection with 400 GeV/c protons proved true with a deflection angle of (10.4{+-}0.5) {mu}rad with respect to the unperturbed beam, with a silicon crystal whose (111) planes were parallel to the beam.« less