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Title: Low-loss photonic device in Ge–Sb–S chalcogenide glass

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1259365
Grant/Contract Number:
NA0002509
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Optics Letters
Additional Journal Information:
Journal Volume: 41; Journal Issue: 13; Related Information: CHORUS Timestamp: 2017-06-24 13:17:15; Journal ID: ISSN 0146-9592
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English

Citation Formats

Du, Qingyang, Huang, Yizhong, Li, Junying, Kita, Derek, Michon, Jérôme, Lin, Hongtao, Li, Lan, Novak, Spencer, Richardson, Kathleen, Zhang, Wei, and Hu, Juejun. Low-loss photonic device in Ge–Sb–S chalcogenide glass. United States: N. p., 2016. Web. doi:10.1364/OL.41.003090.
Du, Qingyang, Huang, Yizhong, Li, Junying, Kita, Derek, Michon, Jérôme, Lin, Hongtao, Li, Lan, Novak, Spencer, Richardson, Kathleen, Zhang, Wei, & Hu, Juejun. Low-loss photonic device in Ge–Sb–S chalcogenide glass. United States. doi:10.1364/OL.41.003090.
Du, Qingyang, Huang, Yizhong, Li, Junying, Kita, Derek, Michon, Jérôme, Lin, Hongtao, Li, Lan, Novak, Spencer, Richardson, Kathleen, Zhang, Wei, and Hu, Juejun. 2016. "Low-loss photonic device in Ge–Sb–S chalcogenide glass". United States. doi:10.1364/OL.41.003090.
@article{osti_1259365,
title = {Low-loss photonic device in Ge–Sb–S chalcogenide glass},
author = {Du, Qingyang and Huang, Yizhong and Li, Junying and Kita, Derek and Michon, Jérôme and Lin, Hongtao and Li, Lan and Novak, Spencer and Richardson, Kathleen and Zhang, Wei and Hu, Juejun},
abstractNote = {},
doi = {10.1364/OL.41.003090},
journal = {Optics Letters},
number = 13,
volume = 41,
place = {United States},
year = 2016,
month = 6
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1364/OL.41.003090

Citation Metrics:
Cited by: 1work
Citation information provided by
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  • We demonstrate the design, fabrication, and characterization of single-mode low-loss waveguides for mid-infrared wavelengths. Planar waveguide structures were fabricated from multilayer thin films of arsenic-based chalcogenide glasses followed by the creation of channel waveguides using the photodarkening effect. Propagation losses as low as 0.5 dB/cm was measured for a quantum cascade laser end-fire coupled into the waveguides. This is a first step towards the design and fabrication of integrated optical components for MIR applications.
  • Composite opal structures for nonlinear applications are obtained by infiltration with chalcogenide glasses As{sub 2}S{sub 3} and AsSe by precipitation from solution. Analysis of spatially resolved optical spectra reveals that the glass aggregates into submillimeter areas inside the opal. These areas exhibit large shifts in the optical stop bands by up to 80 nm, and by comparison with modelling are shown to have uniform glass filling factors of opal pores up to 40%. Characterization of the domain structure of the opals prior to infiltration by large area angle-resolved spectroscopy is an important step in the analysis of the properties ofmore » the infiltrated regions. {copyright} 2001 American Institute of Physics.« less
  • A proper arrangement of photonic crystal waveguide and a point defect cavity gives an important application of photonic filter device in optical communications. We have studied a narrow band filter and a channel drop filter device using 2-D photonic crystal with square lattice structure. A narrow band filter is applied to select a narrow frequency band signal from incoming light, while a channel drop filter is used to drop a particular frequency signal from incoming light. Chalcogenide As{sub 2}S{sub 3} is compared with conventional Si material regarding applications as feasible material for optical devices.
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  • Photostructural changes in a hybrid photonic crystal fiber with chalcogenide nanofilms inside the inner surface of the cladding holes are experimentally demonstrated. The deposition of the amorphous chalcogenide glass films inside the silica capillaries of the fiber was made by infiltrating the nanocolloidal solution-based As{sub 25}S{sub 75}, while the photoinduced changes were performed by side illuminating the fiber near the bandgap edge of the formed glass nanofilms. The photoinduced effect of the chalcogenide glass directly red-shifts the transmission bandgap position of the fiber as high as ∼20.6 nm at around 1600 nm wavelength, while the maximum bandgap intensity change at ∼1270 nm wasmore » −3 dB.« less