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A high precision comparison of the quantized Hall resistance of MOSFET and GaAs/AlGaAs heterostructure devices

Conference ·
OSTI ID:125740
 [1];  [2];  [3]
  1. Swiss Federal Office of Metrology, Wabern (Switzerland)
  2. Institute for National Measurement Standards, Ottawa (Canada)
  3. Institute of Micro and Optoelectronics, Lausanne (Switzerland)
+ Show Author Affiliations

We report comprehensive high precision direct and indirect comparisons of MOSFET and GaAs heterostructure quantized Hall resistors, and of steps 1, 2, 3, 4 and 6 for heterostructure devices. We find no difference between the MOSFET and the heterostructure Hall resistance at a level of better than 1 part in 10{sup 9} (ppb).

OSTI ID:
125740
Report Number(s):
CONF-940603--
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
ACCURACY
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
HALL EFFECT
MEASURING INSTRUMENTS
MEASURING METHODS