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Title: Single-electron regime and Pauli Spin Blockade in a silicon MOS DQD.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1255777
Report Number(s):
SAND2015-4215C
590315
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the American Physical Society March Meeting held March 2 - February 6, 2015 in San Antonio, TX.
Country of Publication:
United States
Language:
English

Citation Formats

Carroll, Malcolm S., rochette, sophie, pioro-ladriere, michel, Ten Eyck, Gregory A., and Pluym, Tammy. Single-electron regime and Pauli Spin Blockade in a silicon MOS DQD.. United States: N. p., 2015. Web.
Carroll, Malcolm S., rochette, sophie, pioro-ladriere, michel, Ten Eyck, Gregory A., & Pluym, Tammy. Single-electron regime and Pauli Spin Blockade in a silicon MOS DQD.. United States.
Carroll, Malcolm S., rochette, sophie, pioro-ladriere, michel, Ten Eyck, Gregory A., and Pluym, Tammy. Fri . "Single-electron regime and Pauli Spin Blockade in a silicon MOS DQD.". United States. https://www.osti.gov/servlets/purl/1255777.
@article{osti_1255777,
title = {Single-electron regime and Pauli Spin Blockade in a silicon MOS DQD.},
author = {Carroll, Malcolm S. and rochette, sophie and pioro-ladriere, michel and Ten Eyck, Gregory A. and Pluym, Tammy},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Conference:
Other availability
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