Single Shot Pauli-Blockade in Lithographically Formed Few Electron MOS Double-Quantum-Dot Using a Single Layer Design.
Conference
·
OSTI ID:1513632
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- Work for Others (WFO)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1513632
- Report Number(s):
- SAND2017-8880C; 656368
- Resource Relation:
- Conference: Proposed for presentation at the International Workshop on Silicon Quantum Electronics held August 18-20, 2017 in Hillsboro, OR.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single-Shot Readout of a S/T Qubit with a Cryogenic AC-Coupled Amplifier in a Lithographic MOS Double Quantum Dot.
Suppression of Pauli Spin Blockade in Few Hole Laterally Gated Double Quantum Dots.
Single-electron regime and Pauli Spin Blockade in a Silicon MOS DQD.
Conference
·
2018
·
OSTI ID:1806923
+10 more
Suppression of Pauli Spin Blockade in Few Hole Laterally Gated Double Quantum Dots.
Conference
·
2017
·
OSTI ID:1426625
+8 more
Single-electron regime and Pauli Spin Blockade in a Silicon MOS DQD.
Conference
·
2015
·
OSTI ID:1255776