Method for fabrication of crack-free ceramic dielectric films

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

Method for fabrication of crack-free ceramic dielectric films

Patent · 31 May 2016

OSTI ID:1254850

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

View Patent

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357;

Assignee:: UCHICAGO ARGONNE, LLC (Chicago, IL)

Patent Number(s):: 9,355,761

Application Number:: 13/250,926

OSTI ID:: 1254850

Country of Publication:: United States

Language:: English

References (13)

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj Journal of Electroceramics, Vol. 22, Issue 4, p. 383-389 https://doi.org/10.1007/s10832-007-9410-1	journal	January 2008
Effects of sintering temperature on the microstructure and dielectric properties of titanium dioxide ceramics Chao, Sheng; Petrovsky, Vladimir; Dogan, Fatih Journal of Materials Science, Vol. 45, Issue 24, p. 6685-6693 https://doi.org/10.1007/s10853-010-4761-4	journal	July 2010
Preparation and characterization of lead lanthanum zirconate titanate (PLZT) thin films using an organic self-assembled monolayer template Garg, A. K.; Tripathi, A. K.; Goel, T. C. Materials Science and Engineering: B, Vol. 87, Issue 1, p. 87-91 https://doi.org/10.1016/S0921-5107(01)00702-4	journal	October 2001
Development of PLZT dielectrics on base metal foils for embedded capacitors Balachandran, U.; Kwon, D. K.; Narayanan, M. Journal of the European Ceramic Society, Vol. 30, Issue 2, p. 365-368 https://doi.org/10.1016/j.jeurceramsoc.2009.05.006	journal	January 2010
Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils Ma, Beihai; Tong, Sheng; Narayanan, Manoj Materials Research Bulletin, Vol. 46, Issue 7, p. 1124-1129 https://doi.org/10.1016/j.materresbull.2011.02.047	journal	July 2011
Dielectric properties of PLZT film-on-foil capacitors Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj Materials Letters, Vol. 62, Issue 20, p. 3573-3575 https://doi.org/10.1016/j.matlet.2008.03.060	journal	July 2008
Dielectric strength and reliability of ferroelectric PLZT films deposited on nickel substrates Ma, Beihai; Narayanan, Manoj; Balachandran, U. (Balu) Materials Letters, Vol. 63, Issue 15, p. 1353-1356 https://doi.org/10.1016/j.matlet.2009.03.021	journal	June 2009
Improved dielectric properties of lead lanthanum zirconate titanate thin films on copper substrates Narayanan, M.; Ma, B.; Balachandran, U. Materials Letters, Vol. 64, Issue 1, p. 22-24 https://doi.org/10.1016/j.matlet.2009.09.059	journal	January 2010
Nucleation- or Growth-Controlled Orientation Development in Chemically Derived Ferroelectric Lead Zirconate Titanate (Pb(Zr_xTi_1-x)O₃, x = 0.4) Thin Films Liu, Yimin; Phule, Pradeep P. Journal of the American Ceramic Society, Vol. 79, Issue 2, p. 495-498 https://doi.org/10.1111/j.1151-2916.1996.tb08151.x	journal	February 1996
Single‐Step Dip Coating of Crack‐Free BaTiO₃ Films >1 μm Thick: Effect of Poly(vinylpyrrolidone) on Critical Thickness Kozuka, Hiromitsu; Kajimura, Masahiro Journal of the American Ceramic Society, Vol. 83, Issue 5, p. 1056-1062 https://doi.org/10.1111/j.1151-2916.2000.tb01330.x	journal	May 2000
Single-Step Deposition of Gel-Derived Lead Zirconate Titanate Films: Critical Thickness and Gel Film to Ceramic Film Conversion Kozuka, Hiromitsu; Takenaka, Shinsuke Journal of the American Ceramic Society, Vol. 85, Issue 11, p. 2696-2702 https://doi.org/10.1111/j.1151-2916.2002.tb00516.x	journal	November 2002
Densification of the PLZT Films Derived from Polymer-Modified Solution by Tailoring Annealing Conditions Du, Z. H.; Ma, J.; Zhang, T. S. Journal of the American Ceramic Society, Vol. 90, Issue 3, p. 815-820 https://doi.org/10.1111/j.1551-2916.2007.01499.x	journal	March 2007
Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel–derived PLZT films Du, Z. H.; Zhang, T. S.; Ma, J. Journal of Materials Research, Vol. 22, Issue 8, p. 2195-2203 https://doi.org/10.1557/jmr.2007.0283	journal	August 2007

Similar Records

Method for fabrication of crack-free ceramic dielectric films

Patent · 2017 · OSTI ID:1411430

Method for fabrication of crack-free ceramic dielectric films

Patent · 2014 · OSTI ID:1124087

Thick adherent dielectric films on plastic substrates and method for depositing same

Patent · 2001 · OSTI ID:874667

Related Subjects

36 MATERIALS SCIENCE

Method for fabrication of crack-free ceramic dielectric films

Citation Formats

References (13)

Similar Records

Related Subjects