Method for fabrication of crack-free ceramic dielectric films
The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.
- Research Organization:
- ANL (Argonne National Laboratory (ANL), Argonne, IL (United States))
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 8,647,737
- Application Number:
- 13/250,926
- OSTI ID:
- 1124087
- Country of Publication:
- United States
- Language:
- English
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