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Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness

Journal Article · · New Journal of Physics
 [1];  [2];  [3];  [2];  [2];  [2];  [4];  [5];  [6];  [7];  [7];  [7];  [7]
  1. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Department of Physics, Stanford University, Stanford,CA 94305–4045, USA
  2. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics
  3. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); RIKEN Center for Emergent Matter Science (CEMS), Wako (Japan)
  4. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Tsinghua Univ., Beijing (China). Institute for Advanced Study
  5. ENN Intelligent Energy Group, Langfang (China)
  6. ENN Intelligent Energy Group, Langfang (China); Stanford Univ., CA (United States). Dept. of Physics
  7. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.
Research Organization:
Stanford Univ., CA (United States). Dept. of Physics
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1254485
Alternate ID(s):
OSTI ID: 22552943
Journal Information:
New Journal of Physics, Journal Name: New Journal of Physics Journal Issue: 1 Vol. 18; ISSN 1367-2630
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (13)

Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator journal June 2017
The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 journal April 2019
Surface structure promoted high-yield growth and magnetotransport properties of Bi2Se3 nanoribbons journal August 2019
Thermoelectric Properties of Topological Insulators journal April 2018
Thermal Engineering in Low-Dimensional Quantum Devices: A Tutorial Review of Nonequilibrium Green's Function Methods journal April 2018
Topological insulators for thermoelectrics journal September 2017
Highly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi 2 Te 3 ) and molybdenum disulfide (MoS 2 ) thin films fabricated by RF magnetron sputtering technique journal October 2018
Temperature dependent Raman of BiTe nanotubes journal December 2018
Observation of optical absorption correlated with surface state of topological insulator journal November 2019
Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb 2 Te 3 journal December 2019
Temperature-Dependent Raman Scattering of Large Size Hexagonal Bi2Se3 Single-Crystal Nanoplates journal October 2018
Thermal engineering in low-dimensional quantum devices: a tutorial review of nonequilibrium Green's function methods text January 2018
Observation of optical absorption correlated with surface state of topological insulator text January 2019

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