Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness
Journal Article
·
· New Journal of Physics
- Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Department of Physics, Stanford University, Stanford,CA 94305–4045, USA
- Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics
- Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); RIKEN Center for Emergent Matter Science (CEMS), Wako (Japan)
- Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Tsinghua Univ., Beijing (China). Institute for Advanced Study
- ENN Intelligent Energy Group, Langfang (China)
- ENN Intelligent Energy Group, Langfang (China); Stanford Univ., CA (United States). Dept. of Physics
- Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.
- Research Organization:
- Stanford Univ., CA (United States). Dept. of Physics
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-76SF00515
- OSTI ID:
- 1254485
- Alternate ID(s):
- OSTI ID: 22552943
- Journal Information:
- New Journal of Physics, Journal Name: New Journal of Physics Journal Issue: 1 Vol. 18; ISSN 1367-2630
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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