Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂

Journal Article · Thu Apr 09 00:00:00 EDT 2015 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/1.4917010· OSTI ID:1252604

Frye, Clint D. ^[1]; Kucheyev, Sergei O. ^[1]; Edgar, James H. ^[2]; Voss, Lars F. ^[1]; Conway, Adam M. ^[1]; Shao, Qinghui ^[1]; Nikolic, Rebecca J. ^[1]

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1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
2. Kansas State Univ., Manhattan, KS (United States)

With this study, icosahedral boron phosphide (B₁₂P₂) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B₁₂P₂ for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10^–4 Ω cm², as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was ~l–4 × 10^–4 Ω cm² after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B₁₂P₂ at 700 °C and a reaction layer between Ni and B₁₂P₂ thinner than ~25 nm at 500 °C.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: AC52-07NA27344
• OSTI ID: 1252604
• Report Number(s): LLNL-JRNL-666166; JVTAD6
• Journal Information: Journal of Vacuum Science and Technology A, Vol. 33, Issue 3; ISSN 0734-2101
• Publisher: American Vacuum Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
gold
nickel
contact resistance
metal to metal contacts
semiconductor junctions