Thermal stability of ohmic contacts to n-In{sub x}Ga{sub 1{minus}x}N

Conference · Thu Oct 31 23:00:00 EST 1996

OSTI ID:395038

Durbha, A; Pearton, S J; Abernathy, C R; Lee, J W; Holloway, P H ^[1]; Ren, F ^[2]

---

1. Univ. of Florida, Gainesville, FL (United States)
2. AT and T Bell Labs., Murray Hill, NJ (United States)

The microstructural properties and interdiffusion reactions of Au/Ge/Ni, Ti/Pt/Au, WSi{sub x} and AuBe contacts on GaN and In{sub 0.5}Ga{sub 0.5}N have been examined using Scanning Electron Microscopy and Auger Electron Spectroscopy. The WSi{sub x} contacts possess excellent thermal stability and retained good structural properties at annealing temperatures as high as 800 C on GaN. The electrical characteristics of WSi{sub x} contacts on In{sub 0.5}Ga{sub 0.5}N had a specific contact resistivity of 1.48 {times} 10{sup {minus}5} {Omega}cm{sup 2} and an excellent surface morphology following annealing at 700 C. The increase in contact resistance observed at higher temperatures was attributed to intermixing of metal and semiconductor. In contrast the Ti/Pt/Au and Au/Ge/Ni contacts were stable only to {le} 500 C. AuBe contacts had the poorest thermal stability, with substantial reaction with GaN occurring even at 400 C. The WSi{sub x} contact appears to be an excellent choice for high temperature GaN electronics applications.

• OSTI ID: 395038
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ANNEALING
AUGER ELECTRON SPECTROSCOPY
BERYLLIUM
COMPOSITE MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRONIC EQUIPMENT
EVAPORATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM NITRIDES
GERMANIUM
GOLD
INDIUM NITRIDES
INTERFACES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NICKEL
PLASMA
PLATINUM
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
TITANIUM
TUNGSTEN