Size effects on the thermal conductivity of amorphous silicon thin films
Journal Article
·
· Physical Review B
- Univ. of Virginia, Charlottesville, VA (United States)
- Univ. of New Mexico, Albuquerque, NM (United States)
In this study, we investigate thickness-limited size effects on the thermal conductivity of amorphous silicon thin films ranging from 3 to 1636 nm grown via sputter deposition. While exhibiting a constant value up to ~100 nm, the thermal conductivity increases with film thickness thereafter. The thickness dependence we demonstrate is ascribed to boundary scattering of long wavelength vibrations and an interplay between the energy transfer associated with propagating modes (propagons) and nonpropagating modes (diffusons). A crossover from propagon to diffuson modes is deduced to occur at a frequency of ~1.8 THz via simple analytical arguments. These results provide empirical evidence of size effects on the thermal conductivity of amorphous silicon and systematic experimental insight into the nature of vibrational thermal transport in amorphous solids.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1251626
- Alternate ID(s):
- OSTI ID: 1245039
- Report Number(s):
- SAND--2015-6735J; 598864
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 14 Vol. 93; ISSN 2469-9950; ISSN PRBMDO
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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