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Title: Effect of nitrogen on the growth of boron doped single crystal diamond

Abstract

Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.

Authors:
 [1];  [1]
  1. Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Publication Date:
Research Org.:
Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1251162
Grant/Contract Number:
NA0002014
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Science Research
Additional Journal Information:
Journal Volume: 3; Journal Issue: 1; Journal ID: ISSN 1927-0585
Publisher:
Canadian Center of Science and Education
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; epitaxial; semiconductor; diamond; spectroscopy; thin-film

Citation Formats

Karna, Sunil, and Vohra, Yogesh. Effect of nitrogen on the growth of boron doped single crystal diamond. United States: N. p., 2013. Web. doi:10.5539/jmsr.v3n1p43.
Karna, Sunil, & Vohra, Yogesh. Effect of nitrogen on the growth of boron doped single crystal diamond. United States. doi:10.5539/jmsr.v3n1p43.
Karna, Sunil, and Vohra, Yogesh. Mon . "Effect of nitrogen on the growth of boron doped single crystal diamond". United States. doi:10.5539/jmsr.v3n1p43. https://www.osti.gov/servlets/purl/1251162.
@article{osti_1251162,
title = {Effect of nitrogen on the growth of boron doped single crystal diamond},
author = {Karna, Sunil and Vohra, Yogesh},
abstractNote = {Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.},
doi = {10.5539/jmsr.v3n1p43},
journal = {Journal of Materials Science Research},
number = 1,
volume = 3,
place = {United States},
year = {Mon Nov 18 00:00:00 EST 2013},
month = {Mon Nov 18 00:00:00 EST 2013}
}

Journal Article:
Free Publicly Available Full Text
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