Accelerated Testing and Modeling of Potential-Induced Degradation as a Function of Temperature and Relative Humidity
An acceleration model based on the Peck equation was applied to power performance of crystalline silicon cell modules as a function of time and of temperature and humidity, the two main environmental stress factors that promote potential-induced degradation. This model was derived from module power degradation data obtained semi-continuously and statistically by in-situ dark current-voltage measurements in an environmental chamber. The modeling enables prediction of degradation rates and times as functions of temperature and humidity. Power degradation could be modeled linearly as a function of time to the second power; additionally, we found that coulombs transferred from the active cell circuit to ground during the stress test is approximately linear with time. Therefore, the power loss could be linearized as a function of coulombs squared. With this result, we observed that when the module face was completely grounded with a condensed phase conductor, leakage current exceeded the anticipated corresponding degradation rate relative to the other tests performed in damp heat.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1250678
- Report Number(s):
- NREL/CP-5J00-64449
- Resource Relation:
- Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
- Country of Publication:
- United States
- Language:
- English
Similar Records
Correlation of Qualification and Accelerated Testing with Field Degradation
Prediction of Potential-Induced Degradation Rate of Thin-Film Modules in the Field Based on Coulombs Transferred