Prediction of Potential-Induced Degradation Rate of Thin-Film Modules in the Field Based on Coulombs Transferred
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Aalborg University
- Pordius LLC
We validated the use of coulombs transferred between the active cell circuit and ground as an index for quantitatively predicting degradation rate in the field for two thin-film module types undergoing potential-induced degradation (PID). The dependence was determined by comparing the degradation rate and leakage current in the field (Cocoa, Florida) to accelerated tests (85 degrees C, 85% relative humidity), both with the application of -1,000 V bias to the cell circuit. The two module types, which degraded about 4% and 11% in power after application of 96 h of bias in chamber, degraded 5% in the field by PID within 200 days and 6 days, respectively. The signatures of PID in the thin-film modules by electroluminescence, photoluminescence, and thermography are shown so that PID in fielded thin-film modules can be identified.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1507666
- Report Number(s):
- NREL/CP-5K00-71847
- Country of Publication:
- United States
- Language:
- English
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