Tuning band alignment using interface dipoles at the Pt/anatase TiO2 interface

Tachikawa, Takashi; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

doi:10.1002/adma.201503339

Tuning band alignment using interface dipoles at the Pt/anatase TiO₂ interface

Journal Article · Tue Oct 27 00:00:00 EDT 2015 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201503339· OSTI ID:1249396

Tachikawa, Takashi ^[1]; Minohara, Makoto ^[2]; Hikita, Yasuyuki ^[3]; Bell, Christopher ^[4]; Hwang, Harold Y. ^[5]

SLAC National Accelerator Lab., Menlo Park, CA (United States); The Univ. of Tokyo, Chiba (Japan)
Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Ibaraki (Japan)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Univ. of Bristol, Bristol (United Kingdom)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

The Schottky barrier heights at the Pt/TiO₂ (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO₃. The large electric field in the LaAlO₃ is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. Lastly, these results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1249396

Report Number(s):: SLAC-PUB--16387

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 45 Vol. 27; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (8)

Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb ₂ Se ₃ /ZnS Heterointerfaces Siol, Sebastian; Schulz, Philip; Young, Matthew Advanced Materials Interfaces, Vol. 3, Issue 24 https://doi.org/10.1002/admi.201600755	journal	November 2016
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions Andrä, Michael; Funck, Carsten; Raab, Nicolas Advanced Electronic Materials, Vol. 6, Issue 1 https://doi.org/10.1002/aelm.201900808	journal	November 2019
Controlled Current Transport in Pt/Nb:SrTiO ₃ Junctions via Insertion of Uniform Thin Layers of TaO _x Tsurumaki‐Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 7 https://doi.org/10.1002/pssr.201900136	journal	March 2019
Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO ₂ heterostructure Ma, Xiangchao; Wu, Xin; Wang, Yucheng Physical Chemistry Chemical Physics, Vol. 19, Issue 28 https://doi.org/10.1039/c7cp03453a	journal	January 2017
Inhomogeneous barrier heights at dipole-controlled SrRuO ₃ /Nb:SrTiO ₃ Schottky junctions Yajima, T.; Minohara, M.; Bell, C. Applied Physics Letters, Vol. 113, Issue 22 https://doi.org/10.1063/1.5052712	journal	November 2018
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Superconducting Tunneling Spectroscopy of Spin-Orbit Coupling and Orbital Depairing in Nb : SrTiO 3 Swartz, Adrian G.; Cheung, Alfred K. C.; Yoon, Hyeok Physical Review Letters, Vol. 121, Issue 16 https://doi.org/10.1103/physrevlett.121.167003	journal	October 2018
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions Andrä, Michael; Funck, Carsten Marco; Raab, Nicolas RWTH Aachen University https://doi.org/10.18154/rwth-2019-11210	text	January 2019

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