Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces
- IBM, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
- Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 (United States)
- Lawrence Livermore National Laboratory, Livermore, California, 94550 (United States)
- Department of Physics, Tulane University, New Orleans, Louisiana 70118 (United States)
- Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
- Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
Synchrotron-based O 1{ital s} and N 1{ital s} photoabsorption spectroscopy, O 1{ital s}, N 1{ital s}, Si 2{ital p}, and valence-band photoelectron spectroscopy (PES), and medium energy ion scattering (MEIS) have been used to determine the composition and thickness of oxynitride films grown in N{sub 2}O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5{times}10{sup 13} N atoms/cm{sup 2}). Film composition was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N-terminated surfaces in thin films to nearly pure SiO{sub 2} in films thicker than {similar_to}20 A. A sample with a 60 A oxynitride film was depth profiled by etching in HF and was shown, via N 1{ital s} absorption spectroscopy, to have N segregation within 10 A above the Si/SiO{sub 2} interface. Core-level PES and MEIS were used to study the growth mechanisms of oxynitrides on Si(100) and these data were used to create a schematic phase diagram showing three distinct regions of oxide formation. A critical N{sub 2}O pressure was discovered at which oxide growth proceeds at over 1000 times its normal rate. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- OSTI ID:
- 124811
- Journal Information:
- Journal of Applied Physics, Vol. 78, Issue 11; Other Information: PBD: 1 Dec 1995
- Country of Publication:
- United States
- Language:
- English
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