skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The effect of humidity on reverse breakdown in 3D silicon sensors

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

Sponsoring Organization:
USDOE
OSTI ID:
1247226
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 785 Journal Issue: C; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (9)

Instability of the behaviour of high resistivity silicon detectors due to the presence of oxide charges
  • Longoni, A.; Sampietro, M.; Strüder, L.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 288, Issue 1 https://doi.org/10.1016/0168-9002(90)90460-N
journal March 1990
Interstrip capacitance stabilization at low humidity
  • Chilingarov, A.; Campbell, D.; Hughes, G.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 560, Issue 1 https://doi.org/10.1016/j.nima.2005.11.198
journal May 2006
Proposed triple-wall, voltage-isolating electrodes for multiple-bias-voltage 3D sensors
  • Parker, Sherwood; Mokhov, N. V.; Rakhno, I. L.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 685 https://doi.org/10.1016/j.nima.2012.04.073
journal September 2012
3D Active Edge Silicon Detector Tests With 120 GeV Muons journal April 2009
Active-edge planar radiation sensors
  • Kenney, C. J.; Segal, J. D.; Westbrook, E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 565, Issue 1 https://doi.org/10.1016/j.nima.2006.05.012
journal September 2006
Field oxide radiation damage measurements in silicon strip detectors
  • Laakso, M.; Singh, P.; Shepard, P. F.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 327, Issue 2-3 https://doi.org/10.1016/0168-9002(93)90718-W
journal April 1993
3D simulations of 3D silicon radiation detector structures
  • Kalliopuska, Juha; Eränen, Simo; Orava, Risto
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 568, Issue 1 https://doi.org/10.1016/j.nima.2006.07.015
journal November 2006
3D — A proposed new architecture for solid-state radiation detectors
  • Parker, S. I.; Kenney, C. J.; Segal, J.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 395, Issue 3 https://doi.org/10.1016/S0168-9002(97)00694-3
journal August 1997
Moisture sensitivity of AC-coupled silicon strip sensors journal October 2005

Similar Records

The effect of humidity on reverse breakdown in 3D silicon sensors
Journal Article · Mon Jun 01 00:00:00 EDT 2015 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1247226

Humidity sensitivity of large area silicon sensors: Study and implications
Journal Article · Wed Jul 22 00:00:00 EDT 2020 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1247226

On the nature of electroluminescence at 1.5 {mu}m in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy
Journal Article · Sat Jan 15 00:00:00 EST 2011 · Semiconductors · OSTI ID:1247226

Related Subjects