Stable vicinal step orientations in m-plane GaN

Kelchner, K. M.; Kuritzky, L. Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

doi:10.1016/j.jcrysgro.2014.10.032

Title: Stable vicinal step orientations in m-plane GaN

Journal Article · Sun Feb 01 00:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.10.032· OSTI ID:1246427

Kelchner, K. M.; Kuritzky, L. Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001009

OSTI ID:: 1246427

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 411 Journal Issue: C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

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Cited by: 12 works

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References (20)

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes Farrell, R. M.; Haeger, D. A.; Chen, X. Journal of Crystal Growth, Vol. 313, Issue 1 https://doi.org/10.1016/j.jcrysgro.2010.08.060	journal	December 2010
Advantages and remaining issues of state-of-the-art m -plane freestanding GaN substrates grown by halide vapor phase epitaxy for m -plane InGaN epitaxial growth Chichibu, S. F.; Kagaya, M.; Corfdir, P. Semiconductor Science and Technology, Vol. 27, Issue 2 https://doi.org/10.1088/0268-1242/27/2/024008	journal	January 2012
Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN Armstrong, A. M.; Kelchner, K.; Nakamura, S. Applied Physics Letters, Vol. 103, Issue 23 https://doi.org/10.1063/1.4841575	journal	December 2013
High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes Farrell, R. M.; Haeger, D. A.; Hsu, P. S. Applied Physics Letters, Vol. 99, Issue 17 https://doi.org/10.1063/1.3656970	journal	October 2011
Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes Kelchner, Kathryn M.; Farrell, Robert M.; Lin, You-Da Applied Physics Express, Vol. 3, Issue 9 https://doi.org/10.1143/APEX.3.092103	journal	September 2010
Optical properties of extended and localized states in m -plane InGaN quantum wells Marcinkevičius, S.; Kelchner, K. M.; Nakamura, S. Applied Physics Letters, Vol. 102, Issue 10 https://doi.org/10.1063/1.4794904	journal	March 2013
Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy Bryant, Benjamin N.; Hirai, Asako; Young, Erin C. Journal of Crystal Growth, Vol. 369 https://doi.org/10.1016/j.jcrysgro.2013.01.031	journal	April 2013
Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE Fujito, Kenji; Kubo, Shuichi; Fujimura, Isao MRS Bulletin, Vol. 34, Issue 5, p. 313-317 https://doi.org/10.1557/mrs2009.92	journal	May 2009
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes Feezell, Daniel F.; Schmidt, Mathew C.; DenBaars, Steven P. MRS Bulletin, Vol. 34, Issue 5 https://doi.org/10.1557/mrs2009.93	journal	May 2009
Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers Holder, Casey; Speck, James S.; DenBaars, Steven P. Applied Physics Express, Vol. 5, Issue 9 https://doi.org/10.1143/APEX.5.092104	journal	September 2012
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates Pourhashemi, A.; Farrell, R. M.; Hardy, M. T. Applied Physics Letters, Vol. 103, Issue 15 https://doi.org/10.1063/1.4824773	journal	October 2013
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Zhao, Yuji; Yan, Qimin; Huang, Chia-Yen Applied Physics Letters, Vol. 100, Issue 20 https://doi.org/10.1063/1.4719100	journal	May 2012
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN Wu, Feng; Lin, You-Da; Chakraborty, Arpan Applied Physics Letters, Vol. 96, Issue 23 https://doi.org/10.1063/1.3447940	journal	June 2010
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes Scheibenzuber, W. G.; Schwarz, U. T.; Veprek, R. G. Physical Review B, Vol. 80, Issue 11 https://doi.org/10.1103/PhysRevB.80.115320	journal	September 2009
Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition Henry, T. A.; Armstrong, A.; Kelchner, K. M. Applied Physics Letters, Vol. 100, Issue 8 https://doi.org/10.1063/1.3687700	journal	February 2012
High-quality nonpolar m -plane GaN substrates grown by HVPE Fujito, Kenji; Kiyomi, Kazumasa; Mochizuki, Tae physica status solidi (a), Vol. 205, Issue 5 https://doi.org/10.1002/pssa.200778709	journal	May 2008
Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm Okamoto, Kuniyoshi; Kashiwagi, Junich; Tanaka, Taketoshi Applied Physics Letters, Vol. 94, Issue 7 https://doi.org/10.1063/1.3078818	journal	February 2009
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN Hirai, A.; Jia, Z.; Schmidt, M. C. Applied Physics Letters, Vol. 91, Issue 19 https://doi.org/10.1063/1.2802570	journal	November 2007
Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate Lin, You-Da; Hardy, Matthew T.; Hsu, Po Shan Applied Physics Express, Vol. 2 https://doi.org/10.1143/APEX.2.082102	journal	July 2009
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Kelchner, Kathryn M.; Kuritzky, Leah Y.; Fujito, Kenji Journal of Crystal Growth, Vol. 382 https://doi.org/10.1016/j.jcrysgro.2013.08.013	journal	November 2013

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