Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Journal Article · · Journal of Crystal Growth

DOI:https://doi.org/10.1016/J.Jcrysgro.2013.08.013· OSTI ID:1161114

Kelchner, K. M.; Kuritzky, L. Y.; Fujito, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001009
• OSTI ID: 1161114
• Journal Information: Journal of Crystal Growth, Vol. 382; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory
• Country of Publication: United States
• Language: English

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