On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

doi:10.1016/j.jcrysgro.2014.12.034

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Journal Article · Tue Jan 06 23:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.12.034· OSTI ID:1246418

Koleske, D. D. ^[1]; Fischer, A. J. ^[1]; Bryant, B. N. ^[2]; Kotula, P. G. ^[1]; Wierer, J. J. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

Not Available

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1246418

Alternate ID(s):: OSTI ID: 1210280
OSTI ID: 1426883

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 415; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (49)

Research challenges to ultra-efficient inorganic solid-state lighting Phillips, J. M.; Coltrin, M. E.; Crawford, M. H. Laser & Photonics Review, Vol. 1, Issue 4, p. 307-333 https://doi.org/10.1002/lpor.200710019	journal	December 2007
Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate Shioda, Tomonari; Yoshida, Hisashi; Tachibana, Koichi physica status solidi (a), Vol. 209, Issue 3 https://doi.org/10.1002/pssa.201100356	journal	January 2012
High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates: High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates Hashimoto, Rei; Hwang, Jongil; Saito, Shinji physica status solidi (c), Vol. 10, Issue 11 https://doi.org/10.1002/pssc.201300238	journal	September 2013
High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates: High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates Hashimoto, Rei; Hwang, Jongil; Saito, Shinji physica status solidi (c), Vol. 11, Issue 3-4 https://doi.org/10.1002/pssc.201300433	journal	February 2014
Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates: Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates Yamada, Hisashi; Iso, Kenji; Saito, Makoto physica status solidi (RRL) - Rapid Research Letters, Vol. 2, Issue 2 https://doi.org/10.1002/pssr.200701313	journal	February 2008
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy Smeeton, T. M.; Humphreys, C. J.; Barnard, J. S. Journal of Materials Science, Vol. 41, Issue 9 https://doi.org/10.1007/s10853-006-7876-x	journal	April 2006
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Liliental-Weber, Z.; Benamara, M.; Washburn, J. Journal of Electronic Materials, Vol. 30, Issue 4 https://doi.org/10.1007/s11664-001-0056-5	journal	April 2001
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Koleske, D. D.; Wickenden, A. E.; Henry, R. L. Journal of Crystal Growth, Vol. 242, Issue 1-2 https://doi.org/10.1016/S0022-0248(02)01348-9	journal	July 2002
In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells Scholz, F.; Sohmer, A.; Off, J. Materials Science and Engineering: B, Vol. 50, Issue 1-3 https://doi.org/10.1016/S0921-5107(97)00184-0	journal	December 1997
Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control Creighton, J. R.; Breiland, W. G.; Koleske, D. D. Journal of Crystal Growth, Vol. 310, Issue 6 https://doi.org/10.1016/j.jcrysgro.2007.12.063	journal	March 2008
The critical thickness of InGaN on (0001)GaN Leyer, M.; Stellmach, J.; Meissner, Ch. Journal of Crystal Growth, Vol. 310, Issue 23 https://doi.org/10.1016/j.jcrysgro.2008.08.021	journal	November 2008
Thermal stability of thin InGaN films on GaN Thaler, G. T.; Koleske, D. D.; Lee, S. R. Journal of Crystal Growth, Vol. 312, Issue 11 https://doi.org/10.1016/j.jcrysgro.2010.03.008	journal	May 2010
Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells Lee, S. R.; Koleske, D. D.; Crawford, M. H. Journal of Crystal Growth, Vol. 355, Issue 1 https://doi.org/10.1016/j.jcrysgro.2012.06.048	journal	September 2012
Controlling indium incorporation in InGaN barriers with dilute hydrogen flows Koleske, D. D.; Wierer, J. J.; Fischer, A. J. Journal of Crystal Growth, Vol. 390 https://doi.org/10.1016/j.jcrysgro.2013.12.037	journal	March 2014
Connection between GaN and InGaN growth mechanisms and surface morphology Koleske, D. D.; Lee, S. R.; Crawford, M. H. Journal of Crystal Growth, Vol. 391 https://doi.org/10.1016/j.jcrysgro.2014.01.010	journal	April 2014
Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison Ahl, J. -P.; Hertkorn, J.; Koch, H. Journal of Crystal Growth, Vol. 398 https://doi.org/10.1016/j.jcrysgro.2014.03.043	journal	July 2014
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Wu, X. H.; Elsass, C. R.; Abare, A. Applied Physics Letters, Vol. 72, Issue 6 https://doi.org/10.1063/1.120844	journal	February 1998
Annealing of ion implanted gallium nitride Tan, H. H.; Williams, J. S.; Zou, J. Applied Physics Letters, Vol. 72, Issue 10 https://doi.org/10.1063/1.121030	journal	March 1998
Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction Pan, Z.; Wang, Y. T.; Zhuang, Y. Applied Physics Letters, Vol. 75, Issue 2 https://doi.org/10.1063/1.124329	journal	July 1999
Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions Kwon, Yong-Hwan; Gainer, G. H.; Bidnyk, S. Applied Physics Letters, Vol. 75, Issue 17 https://doi.org/10.1063/1.125072	journal	October 1999
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping Pereira, S.; Correia, M. R.; Pereira, E. Applied Physics Letters, Vol. 80, Issue 21 https://doi.org/10.1063/1.1481786	journal	May 2002
Optical bandgap energy of wurtzite InN Matsuoka, Takashi; Okamoto, Hiroshi; Nakao, Masashi Applied Physics Letters, Vol. 81, Issue 7 https://doi.org/10.1063/1.1499753	journal	August 2002
Drift, diffusion, and trapping of hydrogen in p -type GaN Seager, C. H.; Myers, S. M.; Wright, A. F. Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1520719	journal	December 2002
Hydrogen isotope exchange and the surface barrier in p-type gallium nitride Myers, S. M.; Seager, C. H. Journal of Applied Physics, Vol. 95, Issue 2 https://doi.org/10.1063/1.1632014	journal	January 2004
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures Graham, D. M.; Soltani-Vala, A.; Dawson, P. Journal of Applied Physics, Vol. 97, Issue 10 https://doi.org/10.1063/1.1897070	journal	May 2005
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers Lee, S. R.; West, A. M.; Allerman, A. A. Applied Physics Letters, Vol. 86, Issue 24 https://doi.org/10.1063/1.1947367	journal	June 2005
Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells Zhang, J. C.; Jiang, D. S.; Sun, Q. Applied Physics Letters, Vol. 87, Issue 7 https://doi.org/10.1063/1.2012531	journal	August 2005
Indium adsorption on GaN under metal-organic chemical vapor deposition conditions Jiang, F.; Wang, R. -V.; Munkholm, A. Applied Physics Letters, Vol. 89, Issue 16 https://doi.org/10.1063/1.2364060	journal	October 2006
Equilibrium critical thickness for misfit dislocations in III-nitrides Holec, David; Zhang, Yucheng; Rao, D. V. Sridhara Journal of Applied Physics, Vol. 104, Issue 12 https://doi.org/10.1063/1.3033553	journal	December 2008
Indium induced step transformation during InGaN growth on GaN Koleske, D. D.; Lee, S. R.; Thaler, G. Applied Physics Letters, Vol. 97, Issue 7 https://doi.org/10.1063/1.3479414	journal	August 2010
InGaN/GaN multiple quantum well concentrator solar cells Dahal, R.; Li, J.; Aryal, K. Applied Physics Letters, Vol. 97, Issue 7 https://doi.org/10.1063/1.3481424	journal	August 2010
Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells Wierer, J. J.; Koleske, D. D.; Lee, S. R. Applied Physics Letters, Vol. 100, Issue 11 https://doi.org/10.1063/1.3695170	journal	March 2012
Point defects introduced by InN alloying into In _x Ga ₁₋ _x N probed using a monoenergetic positron beam Uedono, A.; Tsutsui, T.; Watanabe, T. Journal of Applied Physics, Vol. 113, Issue 12 https://doi.org/10.1063/1.4795815	journal	March 2013
White light emitting diodes with super-high luminous efficacy Narukawa, Yukio; Ichikawa, Masatsugu; Sanga, Daisuke Journal of Physics D: Applied Physics, Vol. 43, Issue 35 https://doi.org/10.1088/0022-3727/43/35/354002	journal	August 2010
The structure and optoelectronic properties of dislocations in GaN Cherns, D. Journal of Physics: Condensed Matter, Vol. 12, Issue 49 https://doi.org/10.1088/0953-8984/12/49/320	journal	November 2000
Effects of macroscopic polarization in III-V nitride multiple quantum wells Fiorentini, Vincenzo; Bernardini, Fabio; Della Sala, Fabio Physical Review B, Vol. 60, Issue 12 https://doi.org/10.1103/PhysRevB.60.8849	journal	September 1999
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina Journal of Display Technology, Vol. 3, Issue 2, p. 160-175 https://doi.org/10.1109/JDT.2007.895339	journal	June 2007
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes Orita, Kenji; Meneghini, Matteo; Ohno, Hiroshi IEEE Journal of Quantum Electronics, Vol. 48, Issue 9 https://doi.org/10.1109/JQE.2012.2203795	journal	September 2012
Recent results of blue and green InGaN laser diodes for laser projection Lutgen, Stephan; Dini, Dimitri; Pietzonka, Ines SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.874757	conference	February 2011
High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes Lin, You-Da; Yamamoto, Shuichiro; Huang, Chia-Yen Applied Physics Express, Vol. 3, Issue 8 https://doi.org/10.1143/APEX.3.082001	journal	July 2010
GaN Growth Using GaN Buffer Layer Nakamura, Shuji Japanese Journal of Applied Physics, Vol. 30, Issue Part 2, No. 10A https://doi.org/10.1143/JJAP.30.L1705	journal	October 1991
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Nakamura, Shuji; Senoh, Masayuki; Iwasa, Naruhito Japanese Journal of Applied Physics, Vol. 34, Issue Part 2, No. 7A https://doi.org/10.1143/JJAP.34.L797	journal	July 1995
Current Status and Issues of Blue Laser Diodes Okahisa, Eiichiro; Masui, Shingo; Yanamoto, Tomoya The Review of Laser Engineering, Vol. 41, Issue 4 https://doi.org/10.2184/lsj.41.4_230	journal	January 2013
InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range Saito, Shinji; Hashimoto, Rei; Hwang, Jongil Applied Physics Express, Vol. 6, Issue 11 https://doi.org/10.7567/APEX.6.111004	journal	November 2013
Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength Armstrong, Andrew M.; Crawford, Mary H.; Koleske, Daniel D. Applied Physics Express, Vol. 7, Issue 3 https://doi.org/10.7567/APEX.7.032101	journal	March 2014
Development of InGaN-based red LED grown on (0001) polar surface Hwang, Jong-Il; Hashimoto, Rei; Saito, Shinji Applied Physics Express, Vol. 7, Issue 7 https://doi.org/10.7567/APEX.7.071003	journal	June 2014
Positron Annihilation Spectroscopy on Nitride-Based Semiconductors Uedono, Akira; Ishibashi, Shoji; Oshima, Nagayasu Japanese Journal of Applied Physics, Vol. 52, Issue 8S https://doi.org/10.7567/JJAP.52.08JJ02	journal	August 2013
Performance of InGaN/GaN light-emitting diodes grown using NH ₃ with oxygen-containing impurities Okada, Narihito; Tadatomo, Kazuyuki; Yamane, Keisuke Japanese Journal of Applied Physics, Vol. 53, Issue 8 https://doi.org/10.7567/JJAP.53.081001	journal	July 2014

Similar Records

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Journal Article · Tue Jan 06 23:00:00 EST 2015 · Journal of Crystal Growth · OSTI ID:1210280

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Journal Article · Tue Jan 06 23:00:00 EST 2015 · Journal of Crystal Growth · OSTI ID:1426883

Increased Indium Incorporation and Efficiency in InGaN Quantum Wells Emitting at 530-590 nm with AlGaN Interlayers.

Conference · Sat Aug 01 00:00:00 EDT 2015 · OSTI ID:1296535

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Citation Formats

References (49)

Similar Records

Related Subjects