On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

doi:10.1016/j.jcrysgro.2014.12.034

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Journal Article · Tue Jan 06 23:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.12.034· OSTI ID:1210280

Koleske, D. D. ^[1]; Fischer, A. J. ^[1]; Bryant, B. N. ^[2]; Kotula, P. G. ^[1]; Wierer, J. J. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1210280

Report Number(s):: SAND--2014-17728J

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 415; ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

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