Radiation-Induced Resistance Changes in Resistive Memory: Separating Displacement Damage and Ionization and Mapping Sensitive Areas.
Conference
·
OSTI ID:1244464
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1244464
- Report Number(s):
- SAND2015-2079PE; 569654
- Country of Publication:
- United States
- Language:
- English
Similar Records
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories.
Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in TaOx Memristors.
Conference
·
Mon Dec 31 23:00:00 EST 2012
·
OSTI ID:1063586
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories.
Conference
·
Thu Feb 28 23:00:00 EST 2013
·
OSTI ID:1314470
Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in TaOx Memristors.
Conference
·
Tue Jul 01 00:00:00 EDT 2014
·
OSTI ID:1315344