High power gain-switched diode laser master oscillator and amplifier

Journal Article · Sun Nov 05 23:00:00 EST 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114585· OSTI ID:124276

Poelker, M ^[1]

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1. Continuous Electron Beam Accelerator Facility, Newport News, Virginia 23606 (United States)

A tapered-stripe, traveling-wave semiconductor optical amplifier was seeded with 3.3 mW of gain-switched diode laser light to obtain over 200 mW average power with pulse widths{approx}105 ps full width at half-maximum (FWHM) and a pulse repetition rate of 499 MHz corresponding to a peak power of 3.8 W. Shorter pulse widths were obtained when the amplifier was driven with less current at the expense of reduced output power. Pulse widths as short as 31 ps FWHM and an average power of 98 mW corresponding to a peak power of 6.3 W were obtained when a different, lower power seed laser was used. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Thomas Jefferson National Accelerator Facility
• DOE Contract Number: AC05-84ER40150
• OSTI ID: 124276
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 67; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
43 PARTICLE ACCELERATORS
AMPLIFIERS
DESIGN
GAIN
LINE WIDTHS
PULSE TECHNIQUES
SEMICONDUCTOR LASERS