Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

Journal Article · Tue Dec 01 00:00:00 EST 2015 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2015.2495160· OSTI ID:1239150

Auden, Elizabeth C. ^[1]; Pacheco, Jose L. ^[1]; Bielejec, Edward ^[1]; Vizkelethy, Gyorgy ^[1]; Abraham, John B. S. ^[1]; Doyle, Barney L. ^[1]

---

1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si⁺⁺ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm² areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si⁺⁺ ions and 60 keV Li⁺ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1239150
• Alternate ID(s): OSTI ID: 1530958
• Report Number(s): SAND--2015-8735J; 615276
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 62; ISSN 0018-9499
• Publisher: Institute of Electrical and Electronics Engineers (IEEE)
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
IBIC
displacement damage
ion beam induced charge
silicon detectors