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Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

Journal Article · · Journal of Materials Chemistry C
DOI:https://doi.org/10.1039/C5TC03463A· OSTI ID:1237632
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [3];  [4];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rensselaer Polytechnic Institute (RPI), Troy, NY (United States)
  4. Rensselaer Polytechnic Institute (RPI), Troy, NY (United States)
Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1237632
Journal Information:
Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 2 Vol. 4; ISSN JMCCCX; ISSN 2050-7526
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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Two dimensional ferromagnetic semiconductor: monolayer CrGeS 3 journal October 2019
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