Gallium nitride nanotube lasers

Journal Article · Wed Dec 31 23:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1364/CLEO_SI.2014.SW1G.3· OSTI ID:1237357

Li, Changyi ^[1]; Liu, Sheng ^[2]; Hurtado, Antonio ^[3]; Wright, Jeremy Benjamin ^[4]; Xu, Huiwen ^[1]; Luk, Ting Shan ^[2]; Figiel, Jeffrey J. ^[2]; Brener, Igal ^[2]; Brueck, Steven R. J. ^[1]; Wang, George T. ^[2]

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1. Univ. of New Mexico, Albuquerque, NM (United States)
2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
3. Univ. of Strathclyde, Glasgow (United Kingdom)
4. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1237357
• Report Number(s): SAND--2015-20783J; 558222
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. SW1G
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
GaN
annular emission
laser
nanotube