Mechanical behavior of gallium nitride nanotubes under combined tension-torsion: An atomistic simulation

Journal Article · Wed Jan 02 23:00:00 EST 2008 · Journal of Applied Physics, 103(1):013505, (3 pages)

DOI:https://doi.org/10.1063/1.2828169· OSTI ID:922161

Wang, Zhiguo; Zu, Xiaotao T; Gao, Fei; Weber, William J

The tensile mechanical behavior of single crystalline gallium nitride (GaN) nanotubes under combined tension-torsion is investigated using molecular dynamics simulations with an empirical potential. The simulation results show that a small torsion rate (<0.010° ps-1) does not affect the tensile behavior of GaN nanotube, i.e. the nanotubes show brittle properties at low temperatures; whereas at high temperatures, they behave as ductile materials. However, the failure stress decreases with increasing rate of torsion above 0.010° ps-1, and the nanotube fails in a different manner. The torsion rate has no effect on the elastic properties of GaN nanotubes.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 922161
• Report Number(s): PNNL-SA-58365; KC0201020
• Journal Information: Journal of Applied Physics, 103(1):013505, (3 pages), Journal Name: Journal of Applied Physics, 103(1):013505, (3 pages) Journal Issue: 1 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
GaN
MOLECULAR DYNAMICS METHOD
Mechanical properties
NANOTUBES
TEMPERATURE DEPENDENCE
TENSILE PROPERTIES
TORSION
computer simulation
nanotubes