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Analysis of lasers as a solution to efficiency droop in solid-state lighting

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4932582· OSTI ID:1236233
 [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This letter analyzes the proposal to mitigate the efficiency droop in solid-state light emitters by replacing InGaN light-emitting diodes (LEDs) with lasers. The argument in favor of this approach is that carrier-population clamping after the onset of lasing limits carrier loss to that at threshold, while stimulated emission continues to grow with injection current. A fully quantized (carriers and light) theory that is applicable to LEDs and lasers (above and below threshold) is used to obtain a quantitative evaluation. The results confirm the potential advantage of higher laser output power and efficiency above lasing threshold, while also indicating disadvantages including low efficiency prior to lasing onset, sensitivity of lasing threshold to temperature, and the effects of catastrophic laser failure. As a result, a solution to some of these concerns is suggested that takes advantage of recent developments in nanolasers.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1236233
Report Number(s):
SAND--2015-8937J; 608309
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (19)

Comparison between blue lasers and light-emitting diodes for future solid-state lighting Comparison between blue lasers and light-emitting diodes journal August 2013
Temperature-dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum-well diodes journal January 2009
Emission properties of nanolasers during the transition to lasing journal August 2014
Thresholdless nanoscale coaxial lasers journal February 2012
Lasing in metallic-coated nanocavities journal September 2007
Auger recombination in InGaN measured by photoluminescence journal October 2007
Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model journal September 2010
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes journal April 2011
Temperature-dependence of the internal efficiency droop in GaN-based diodes journal October 2011
Photon-number correlations near the threshold of microcavity lasers in the weak-coupling regime journal May 1994
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop journal April 2013
Analysis of semiconductor microcavity lasers using rate equations journal January 1991
Nonequilibrium model for semiconductor laser modulation response journal April 2002
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting journal June 2007
Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes journal October 2004
Nonequilibrium Many-Body Theory of Intersubband Lasers journal March 2006
Comparison of quantum and semiclassical radiation theories with application to the beam maser journal January 1963
Two-Dimensional Photonic Band-Gap Defect Mode Laser journal June 1999
Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode journal January 2014

Cited By (9)

Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation journal May 2017
Investigation of Saturation Effects in Ceramic Phosphors for Laser Lighting journal December 2017
A Thermally Robust La 3 Si 6 N 11 :Ce-in-Glass Film for High-Brightness Blue-Laser-Driven Solid State Lighting journal November 2018
Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation journal January 2017
Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling journal February 2017
Quantum-optical influences in optoelectronics—An introduction journal December 2018
Delayed Transition to Coherent Emission in Nanolasers with Extended Gain Media journal November 2018
Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling text January 2017
Delayed transition to coherent emission in nanolasers with extended gain media text January 2018

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