Thermal conductivity in nanocrystalline-SiC/C superlattices
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed to explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1236207
- Report Number(s):
- SAND--2015-7224J; 604114
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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