Basal-plane thermal conductivity of nanocrystalline and amorphized thin germanane

Coloyan, Gabriella; Cultrara, Nicholas D.; Katre, Ankita; Carrete, Jesús; Heine, Matt; Ou, Eric; Kim, Jaehyun; Jiang, Shishi; Lindsay, Lucas; Mingo, Natalio; Broido, David; Heremans, Joseph P.; Goldberger, Joshua; Shi, Li

doi:10.1063/1.4963704

Basal-plane thermal conductivity of nanocrystalline and amorphized thin germanane

Journal Article · Fri Sep 30 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4963704· OSTI ID:1327610

Coloyan, Gabriella ^[1]; Cultrara, Nicholas D. ^[2]; Katre, Ankita ^[3]; ^[3]; Heine, Matt ^[4]; Ou, Eric ^[1]; Kim, Jaehyun ^[1]; Jiang, Shishi ^[2]; Lindsay, Lucas ^[5]; Mingo, Natalio ^[3]; Broido, David ^[4]; ^[6]; Goldberger, Joshua ^[2]; ^[1]

Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering
The Ohio State Univ., Columbus, OH (United States); Dept. of Chemistry
French Atomic and Alternative Energy Commission, Grenoble (France)
Boston College, Chestnut Hill, MA (United States). Dept. of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
The Ohio State Univ., Columbus, OH (United States). Dept. of Mechanical and Aerospace Engineering

Recently, we synthesized Germanane (GeH), a hydrogen-terminated layered germanium structure. We employed a four-probe thermal transport measurement method to obtain the basal-plane thermal conductivity of thin exfoliated GeH flakes and correlated the measurement results with the crystal structure. Furthermore, the obtained thermal conductivity increases with increasing temperature, suggesting that extrinsic grain boundary and defect scattering dominate intrinsic phonon-phonon scattering. Annealing a polycrystalline GeH sample at 195 C caused it to become amorphous, reducing the room-temperature thermal conductivity from 0.53± 0.03 W m^-1 K^-1, which is close to the value calculated for 3.3 nm grain size, to 0.29± 0.02 W m^-1 K^-1, which approaches the calculated amorphous limit in the basal plane thermal conductivity.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725; FG02-07ER46377

OSTI ID:: 1327610

Alternate ID(s):: OSTI ID: 1327552

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 109; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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