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Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4934838· OSTI ID:1235538
 [1];  [2];  [2];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. Thus we then extract the nonradiative recombination current associated with the quantum-dot active region from a comparison of measured and calculated gain versus current relations.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1235538
Alternate ID(s):
OSTI ID: 22485958
Report Number(s):
SAND--2016-0273J; 618406
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (7)

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates journal May 2016
Effects of modulation p doping in InAs quantum dot lasers on silicon journal August 2018
Quantum-optical influences in optoelectronics—An introduction journal December 2018
On quantum-dot lasing at gain peak with linewidth enhancement factor α H = 0 journal February 2020
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width journal January 2019
Optically pumped 13  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon journal January 2016
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width text January 2019

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