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Title: Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics

Abstract

The interest in plasmonic technologies surrounds many emergent optoelectronic applications, such as plasmon lasers, transistors, sensors and information storage. Although plasmonic materials for ultraviolet–visible and near-infrared wavelengths have been found, the mid-infrared range remains a challenge to address: few known systems can achieve subwavelength optical confinement with low loss in this range. With a combination of experiments and ab initio modelling, here we demonstrate an extreme peak of electron mobility in Dy-doped CdO that is achieved through accurate ‘defect equilibrium engineering’. In so doing, we create a tunable plasmon host that satisfies the criteria for mid-infrared spectrum plasmonics, and overcomes the losses seen in conventional plasmonic materials. In particular, extrinsic doping pins the CdO Fermi level above the conduction band minimum and it increases the formation energy of native oxygen vacancies, thus reducing their populations by several orders of magnitude. The substitutional lattice strain induced by Dy doping is sufficiently small, allowing mobility values around 500 cm 2 V –1 s –1 for carrier densities above 10 20 cm –3. As a result, our work shows that CdO:Dy is a model system for intrinsic and extrinsic manipulation of defects affecting electrical, optical and thermal properties, that oxide conductors are idealmore » candidates for plasmonic devices and that the defect engineering approach for property optimization is generally applicable to other conducting metal oxides.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3];  [4];  [4];  [4];  [1];  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Duke Univ., Durham, NC (United States)
  3. Univ. of Virginia, Charlottesville, VA (United States)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235320
Report Number(s):
SAND-2014-17561J
Journal ID: ISSN 1476-1122; nmat4203
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 14; Journal Issue: 4; Journal ID: ISSN 1476-1122
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
nanophotonics and plasmonics

Citation Formats

Sachet, Edward, Shelton, Christopher T., Harris, Joshua S., Gaddy, Benjamin E., Irving, Douglas L., Curtarolo, Stefano, Donovan, Brian F., Hopkins, Patrick E., Sharma, Peter A., Sharma, Ana Lima, Ihlefeld, Jon, Franzen, Stefan, and Maria, Jon -Paul. Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics. United States: N. p., 2015. Web. doi:10.1038/NMAT4203.
Sachet, Edward, Shelton, Christopher T., Harris, Joshua S., Gaddy, Benjamin E., Irving, Douglas L., Curtarolo, Stefano, Donovan, Brian F., Hopkins, Patrick E., Sharma, Peter A., Sharma, Ana Lima, Ihlefeld, Jon, Franzen, Stefan, & Maria, Jon -Paul. Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics. United States. doi:10.1038/NMAT4203.
Sachet, Edward, Shelton, Christopher T., Harris, Joshua S., Gaddy, Benjamin E., Irving, Douglas L., Curtarolo, Stefano, Donovan, Brian F., Hopkins, Patrick E., Sharma, Peter A., Sharma, Ana Lima, Ihlefeld, Jon, Franzen, Stefan, and Maria, Jon -Paul. Mon . "Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics". United States. doi:10.1038/NMAT4203. https://www.osti.gov/servlets/purl/1235320.
@article{osti_1235320,
title = {Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics},
author = {Sachet, Edward and Shelton, Christopher T. and Harris, Joshua S. and Gaddy, Benjamin E. and Irving, Douglas L. and Curtarolo, Stefano and Donovan, Brian F. and Hopkins, Patrick E. and Sharma, Peter A. and Sharma, Ana Lima and Ihlefeld, Jon and Franzen, Stefan and Maria, Jon -Paul},
abstractNote = {The interest in plasmonic technologies surrounds many emergent optoelectronic applications, such as plasmon lasers, transistors, sensors and information storage. Although plasmonic materials for ultraviolet–visible and near-infrared wavelengths have been found, the mid-infrared range remains a challenge to address: few known systems can achieve subwavelength optical confinement with low loss in this range. With a combination of experiments and ab initio modelling, here we demonstrate an extreme peak of electron mobility in Dy-doped CdO that is achieved through accurate ‘defect equilibrium engineering’. In so doing, we create a tunable plasmon host that satisfies the criteria for mid-infrared spectrum plasmonics, and overcomes the losses seen in conventional plasmonic materials. In particular, extrinsic doping pins the CdO Fermi level above the conduction band minimum and it increases the formation energy of native oxygen vacancies, thus reducing their populations by several orders of magnitude. The substitutional lattice strain induced by Dy doping is sufficiently small, allowing mobility values around 500 cm2 V–1 s–1 for carrier densities above 1020 cm–3. As a result, our work shows that CdO:Dy is a model system for intrinsic and extrinsic manipulation of defects affecting electrical, optical and thermal properties, that oxide conductors are ideal candidates for plasmonic devices and that the defect engineering approach for property optimization is generally applicable to other conducting metal oxides.},
doi = {10.1038/NMAT4203},
journal = {Nature Materials},
number = 4,
volume = 14,
place = {United States},
year = {Mon Feb 16 00:00:00 EST 2015},
month = {Mon Feb 16 00:00:00 EST 2015}
}

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