Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS
Journal Article
·
· Journal of Chemical Physics
- Austin Peay State Univ., Clarksville, TN (United States)
- Univ. de Rennes, Rennes Cedex (France); Scientific Research Company “Carat”, Lviv (Ukraine)
- Univ. de Rennes, Rennes Cedex (France)
- Univ. of Rzeszow (Poland)
- Lehigh Univ., Bethlehem, PA (United States)
Effect of Ga addition on the structure of vitreous As2Se3 is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The “8-N” rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to “8-N” rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga2Se3 crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. As a result, the existence of Ga–As and Se–Se bonds in the samples with higher Ga content is supported by present studies.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Marie-Curie Action
- OSTI ID:
- 1229418
- Alternate ID(s):
- OSTI ID: 22415773
- Report Number(s):
- BNL--111494-2015-JA
- Journal Information:
- Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 18 Vol. 142; ISSN 0021-9606
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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