Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures
Journal Article
·
· ACS Applied Materials and Interfaces
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC00112704
- OSTI ID:
- 1229339
- Report Number(s):
- BNL-111414-2015-JA
- Journal Information:
- ACS Applied Materials and Interfaces, Vol. 7, Issue 37; ISSN 1944-8244
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
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