Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

doi:10.1063/1.4923407

Title: Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Journal Article · Wed Jul 08 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4923407· OSTI ID:1228331

Chandra, Nishant ^[1];

^[1]; Cho, Jeong-Hyun ^[2];

^[2];

^[1]; Goodnick, Stephen M. ^[1]

School of Electrical Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-8806, USA
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1228331

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 118 Journal Issue: 2; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (25)

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers Jung, Jae Hun; Yoon, Hyun Sik; Kim, Yu Lee Nanotechnology, Vol. 21, Issue 29 https://doi.org/10.1088/0957-4484/21/29/295602	journal	June 2010
Silicon Vertically Integrated Nanowire Field Effect Transistors Goldberger, Josh; Hochbaum, Allon I.; Fan, Rong Nano Letters, Vol. 6, Issue 5 https://doi.org/10.1021/nl060166j	journal	May 2006
Integrated silicon nanowire diodes and the effects of gold doping from the growth catalyst Jackson, Justin B.; Kapoor, Divesh; Jun, Sun-Gon Journal of Applied Physics, Vol. 102, Issue 5 https://doi.org/10.1063/1.2778290	journal	September 2007
Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe ₂ using pulsed laser anneal Shi Ya Lim, Phyllis; Zhi Chi, Dong; Cai Wang, Xin Applied Physics Letters, Vol. 101, Issue 17 https://doi.org/10.1063/1.4762003	journal	October 2012
Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes Carnevale, Santino D.; Kent, Thomas F.; Phillips, Patrick J. Nano Letters, Vol. 13, Issue 7 https://doi.org/10.1021/nl400200g	journal	June 2013
Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire Perea, Daniel E.; Hemesath, Eric R.; Schwalbach, Edwin J. Nature Nanotechnology, Vol. 4, Issue 5 https://doi.org/10.1038/nnano.2009.51	journal	March 2009
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane Schmid, H.; Björk, M. T.; Knoch, J. Journal of Applied Physics, Vol. 103, Issue 2 https://doi.org/10.1063/1.2832760	journal	January 2008
Doping of germanium nanowires grown in presence of PH3 Tutuc, E.; Chu, J. O.; Ott, J. A. Applied Physics Letters, Vol. 89, Issue 26 https://doi.org/10.1063/1.2410238	journal	December 2006
Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation Ikeda, Keiji; Yamashita, Yoshimi; Sugiyama, Naoharu Applied Physics Letters, Vol. 88, Issue 15 https://doi.org/10.1063/1.2191829	journal	April 2006
Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor–Liquid–Solid-Grown Nanowires Connell, Justin G.; Yoon, KunHo; Perea, Daniel E. Nano Letters, Vol. 13, Issue 1 https://doi.org/10.1021/nl3038695	journal	December 2012
In Situ p-n Junctions and Gated Devices in Titanium-Silicide Nucleated Si Nanowires Tang, Qiang; Kamins, Theodore I.; Liu, Xian Electrochemical and Solid-State Letters, Vol. 8, Issue 8 https://doi.org/10.1149/1.1945371	journal	January 2005
Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes Léonard, François; Talin, A. Alec; Swartzentruber, B. S. Physical Review Letters, Vol. 102, Issue 10 https://doi.org/10.1103/PhysRevLett.102.106805	journal	March 2009
Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth Park, Se Jun; Chung, Sung Hwan; Kim, Bong-Joong Journal of Materials Research, Vol. 26, Issue 21 https://doi.org/10.1557/jmr.2011.313	journal	October 2011
Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100) Chawanda, A.; Nyamhere, C.; Auret, F. D. Journal of Alloys and Compounds, Vol. 492, Issue 1-2 https://doi.org/10.1016/j.jallcom.2009.11.202	journal	March 2010
Silicon Nanowire Esaki Diodes Schmid, Heinz; Bessire, Cedric; Björk, Mikael T. Nano Letters, Vol. 12, Issue 2 https://doi.org/10.1021/nl2035964	journal	January 2012
Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology Li, Rui; Yao, H. B.; Lee, S. J. Thin Solid Films, Vol. 504, Issue 1-2 https://doi.org/10.1016/j.tsf.2005.09.033	journal	May 2006
Vertically Oriented Germanium Nanowires Grown from Gold Colloids on Silicon Substrates and Subsequent Gold Removal Woodruff, Jacob H.; Ratchford, Joshua B.; Goldthorpe, Irene A. Nano Letters, Vol. 7, Issue 6, p. 1637-1642 https://doi.org/10.1021/nl070595x	journal	June 2007
Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films Zhou, Yi; Han, Wei; Wang, Yong Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3357423	journal	March 2010
Silicon and germanium nanowires: Growth, properties, and integration Picraux, S. Tom; Dayeh, Shadi A.; Manandhar, Pradeep JOM, Vol. 62, Issue 4 https://doi.org/10.1007/s11837-010-0057-z	journal	April 2010
Schottky diodes based on a single GaN nanowire Kim, Jae-Ryoung; Oh, Hwangyou; So, Hye Mi Nanotechnology, Vol. 13, Issue 5 https://doi.org/10.1088/0957-4484/13/5/333	journal	September 2002
The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes Chattopadhyay, P. Journal of Physics D: Applied Physics, Vol. 29, Issue 3 https://doi.org/10.1088/0022-3727/29/3/047	journal	March 1996
Nature of germanium nanowire heteroepitaxy on silicon substrates Jagannathan, Hemanth; Deal, Michael; Nishi, Yoshio Journal of Applied Physics, Vol. 100, Issue 2 https://doi.org/10.1063/1.2219007	journal	July 2006
Nanowires in Nanoelectronics Ferry, D. K. Science, Vol. 319, Issue 5863 https://doi.org/10.1126/science.1154446	journal	February 2008
Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires Le, Son T.; Jannaty, P.; Zaslavsky, A. Applied Physics Letters, Vol. 96, Issue 26 https://doi.org/10.1063/1.3457862	journal	June 2010
Integration of Nanowire Devices in Out-of-Plane Geometry Manandhar, P.; Akhadov, E. A.; Tracy, C. Nano Letters, Vol. 10, Issue 6 https://doi.org/10.1021/nl100747w	journal	June 2010

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