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Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4923407· OSTI ID:1228331
 [1];  [1];  [2];  [2];  [1];  [1]
  1. School of Electrical Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-8806, USA
  2. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
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Sponsoring Organization:
USDOE
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1228331
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

References (25)

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Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100) journal March 2010
Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology journal May 2006
Silicon Vertically Integrated Nanowire Field Effect Transistors journal May 2006
Vertically Oriented Germanium Nanowires Grown from Gold Colloids on Silicon Substrates and Subsequent Gold Removal journal June 2007
Integration of Nanowire Devices in Out-of-Plane Geometry journal June 2010
Silicon Nanowire Esaki Diodes journal January 2012
Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor–Liquid–Solid-Grown Nanowires journal December 2012
Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes journal June 2013
Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire journal March 2009
Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation journal April 2006
Nature of germanium nanowire heteroepitaxy on silicon substrates journal July 2006
Doping of germanium nanowires grown in presence of PH3 journal December 2006
Integrated silicon nanowire diodes and the effects of gold doping from the growth catalyst journal September 2007
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane journal January 2008
Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films journal March 2010
Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires journal June 2010
Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe 2 using pulsed laser anneal journal October 2012
The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes journal March 1996
Schottky diodes based on a single GaN nanowire journal September 2002
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers journal June 2010
Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes journal March 2009
Nanowires in Nanoelectronics journal February 2008
In Situ p-n Junctions and Gated Devices in Titanium-Silicide Nucleated Si Nanowires journal January 2005
Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth journal October 2011

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