Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

Bainsla, Lakhan; Mallick, A. I.; Raja, M. Manivel; Coelho, A. A.; Nigam, A. K.; Johnson, D. D.; Alam, Aftab; Suresh, K. G.

doi:10.1103/PhysRevB.92.045201

Title: Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

Journal Article · Wed Jul 08 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.92.045201· OSTI ID:1227394

Bainsla, Lakhan ^[1]; Mallick, A. I. ^[1]; Raja, M. Manivel ^[2]; Coelho, A. A. ^[3]; Nigam, A. K. ^[4]; Johnson, D. D. ^[5]; Alam, Aftab ^[1]; Suresh, K. G. ^[1]

Indian Inst. of Technology (IIT), Mumbai (India)
Defence Metallurgical Research Lab., Hyderabad (India)
Universidade Estadual de Campinas-UNICAMP, Sao Paulo (Brazil)
DCMPMS, Mumbai (India)
Ames Lab. and Iowa State Univ., Ames, IA (United States)

Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), which offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Supported by electronic-structure calculations, we report evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO₃ structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (M_S) was obtained at 8K agrees with the Slater-Pauling rule and the Curie temperature (T_C) is found to exceed 400K. Carrier concentration (up to 250K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185S/cm at 5K. Considering the SGS properties and high T_C, this material appears to be promising for spintronic applications.

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Research Organization:: Ames Lab., Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-07CH11358

OSTI ID:: 1227394

Alternate ID(s):: OSTI ID: 1198625

Report Number(s):: IS-J 8743; PRBMDO

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 92, Issue 4; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 112 works

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Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications Bainsla, Lakhan; Suresh, K. G. Applied Physics Reviews, Vol. 3, Issue 3 https://doi.org/10.1063/1.4959093	journal	September 2016
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