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Title: Effect of disorder on the magnetic and electronic structure of a prospective spin-gapless semiconductor MnCrVAl

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4972797· OSTI ID:1336847
 [1];  [2];  [3];  [4]; ORCiD logo [1];  [5];  [3];  [6];  [7];  [5];  [8]
  1. Department of Physics, South Dakota State University, Brookings, South Dakota 57007, USA, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
  2. Department of Chemistry and Biochemistry, University of Northern Iowa, Cedar Falls, Iowa 50614, USA
  3. Department of Physics, University of Northern Iowa, Cedar Falls, Iowa 50614, USA
  4. Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA
  5. Department of Physics, South Dakota State University, Brookings, South Dakota 57007, USA
  6. Department of Computer Science, University of Northern Iowa, Cedar Falls, Iowa 50614, USA
  7. Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
  8. Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA, Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA

Recent discovery of a new class of materials, spin-gapless semiconductors (SGS), has attracted considerable attention in the last few years, primarily due to potential applications in the emerging field of spin-based electronics (spintronics). Here, we investigate structural, electronic, and magnetic properties of one potential SGS compound, MnCrVAl, using various experimental and theoretical techniques. Our calculations show that this material exhibits ≈ 0.5 eV band gap for the majority-spin states, while for the minority-spin it is nearly gapless. The calculated magnetic moment for the completely ordered structure is 2.9 μB/f.u., which is different from our experimentally measured value of almost zero. Here, this discrepancy is explained by the structural disorder. In particular, A2 type disorder, where Mn or Cr atoms exchange their positions with Al atoms, results in induced antiferromagnetic exchange coupling, which, at a certain level of disorder, effectively reduces the total magnetic moment to zero. This is consistent with our x-ray diffraction measurements which indicate the presence of A2 disorder in all of our samples. In addition, we also show that B2 disorder does not result in antiferromagnetic exchange coupling and therefore does not significantly reduce the total magnetic moment.

Research Organization:
South Dakota State Univ., Brookings, SD (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-04ER46152
OSTI ID:
1336847
Alternate ID(s):
OSTI ID: 1393521; OSTI ID: 1421283
Journal Information:
AIP Advances, Journal Name: AIP Advances Vol. 7 Journal Issue: 5; ISSN 2158-3226
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

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