Effect of current injection into thin-film Josephson junctions

Journal Article · Mon Nov 10 23:00:00 EST 2014 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.90.184504· OSTI ID:1226910

Kogan, V. G. ^[1]; Mints, R. G. ^[2]

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1. Ames Lab., Ames, IA (United States)
2. Tel Aviv Univ., Ramat Aviv (Israel)

New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ²/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

• Research Organization: Ames Laboratory (AMES), Ames, IA (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: AC02-07CH11358
• OSTI ID: 1226910
• Alternate ID(s): OSTI ID: 1180080
• Report Number(s): IS--J 8548
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 18 Vol. 90; ISSN 1098-0121; ISSN PRBMDO
• Publisher: American Physical Society (APS)
• Country of Publication: United States
• Language: English

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