Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

Xiao, Zhigang; Kisslinger, Kim

doi:10.1116/1.4922627

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

Journal Article · Wed Jun 17 00:00:00 EDT 2015 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/1.4922627· OSTI ID:1224764

Xiao, Zhigang ^[1]; Kisslinger, Kim ^[2]

Alabama A&M Univ., Normal, AL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Thin films of hafnium dioxide (HfO₂) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO₂ using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO₂ thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO₂ film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO₂ thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO₂ thin film functioned very well as the gate oxide.

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI ID:: 1224764

Report Number(s):: BNL--108477-2015-JA; KC0403020

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 4 Vol. 33; ISSN 2166-2746; ISSN JVTBD9

Publisher:: American Vacuum Society/AIPCopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
Center for Functional Nanomaterials
complementary metal-oxide semiconductor (CMOS) electronic circuits
hafnium dioxide (HfO2) thin films
silicon ring oscillator

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

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References (15)

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