Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes

Yu, Wenlong; Jiang, Yuxuan; Huan, Chao; Chen, Xunchi; Jiang, Zhigang; Hawkins, Samuel D.; Klem, John F.; Pan, Wei

doi:10.1063/1.4901965

Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes

Journal Article · Wed Nov 12 23:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901965· OSTI ID:1224296

Yu, Wenlong ^[1]; Jiang, Yuxuan ^[1]; Huan, Chao ^[1]; Chen, Xunchi ^[1]; Jiang, Zhigang ^[1]; Hawkins, Samuel D. ^[2]; Klem, John F. ^[2]; Pan, Wei ^[2]

School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Not Available

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC04-94AL85000; AC52-06NA25396

OSTI ID:: 1224296

Alternate ID(s):: OSTI ID: 22391952

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 105; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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