Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
- Dow
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- INDUSTRY
- OSTI ID:
- 1212217
- Journal Information:
- ECS Transactions, Vol. 64, Issue (7) ; 2014; ISSN 1938-5862
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals
Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers
Journal Article
·
Sun Oct 05 00:00:00 EDT 2014
· ECS Transactions
·
OSTI ID:1212217
+6 more
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals
Journal Article
·
Wed Sep 01 00:00:00 EDT 2021
· Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
·
OSTI ID:1212217
+4 more
Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers
Journal Article
·
Thu Oct 01 00:00:00 EDT 2009
· Journal of Applied Physics
·
OSTI ID:1212217
+3 more