Barrier/Cu contact resistivity
- California Inst. of Tech., Pasadena, CA (United States)
- Cornell Univ., Ithaca, NY (United States)
- Sandia National Labs., Albuquerque, NM (United States)
The specific contact resistivity of Cu with ({alpha} + {beta})-Ta, TiN, {alpha}-W, and amorphous-Ta{sub 36}Si{sub 14}N{sub 50} barrier films is measured using a novel four-point-probe approach. Geometrically, the test structures consist of colinear sets of W-plugs to act as current and voltage probes that contact the bottom of a planar Cu/barrier/Cu stack. Underlying Al interconnects link the plugs to the current source and voltmeter. The center-to-center distance of the probes ranges from 3 to 200 {micro}m. Using a relation developed by Vu et al., a contact resistivity of roughly 7 {times} 10{sup {minus}9} {Omega} cm{sup 2} is obtained for all tested barrier/Cu combinations. By reflective-mode small-angle X-ray scattering, the similarity in contact resistivity among the barrier films may be related to interfacial impurities absorbed from the deposition process.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 119996
- Report Number(s):
- SAND-95-2328C; CONF-9510161-2; ON: DE96001731; TRN: AHC29527%%139
- Resource Relation:
- Conference: Advanced metalization and interconnect systems for ultra large scale integration applications, Portland, OR (United States), 3-5 Oct 1995; Other Information: PBD: 17 Oct 1995
- Country of Publication:
- United States
- Language:
- English
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