Barrier/Cu contact resistivity

Technical Report · Tue Oct 17 00:00:00 EDT 1995

DOI:https://doi.org/10.2172/119996· OSTI ID:119996

Reid, J S; Nicolet, M A ^[1]; Angyal, M S; Lilienfeld, D; Shacham-Diamand, Y ^[2]; Smith, P M ^[3]

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1. California Inst. of Tech., Pasadena, CA (United States)
2. Cornell Univ., Ithaca, NY (United States)
3. Sandia National Labs., Albuquerque, NM (United States)

The specific contact resistivity of Cu with ({alpha} + {beta})-Ta, TiN, {alpha}-W, and amorphous-Ta{sub 36}Si{sub 14}N{sub 50} barrier films is measured using a novel four-point-probe approach. Geometrically, the test structures consist of colinear sets of W-plugs to act as current and voltage probes that contact the bottom of a planar Cu/barrier/Cu stack. Underlying Al interconnects link the plugs to the current source and voltmeter. The center-to-center distance of the probes ranges from 3 to 200 {micro}m. Using a relation developed by Vu et al., a contact resistivity of roughly 7 {times} 10{sup {minus}9} {Omega} cm{sup 2} is obtained for all tested barrier/Cu combinations. By reflective-mode small-angle X-ray scattering, the similarity in contact resistivity among the barrier films may be related to interfacial impurities absorbed from the deposition process.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 119996
• Report Number(s): SAND--95-2328C; CONF-9510161--2; ON: DE96001731
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM
COPPER
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
EXPERIMENTAL DATA
FABRICATION
INTEGRATED CIRCUITS
INTERFACES
LAYERS
LEAST SQUARE FIT
SILICON NITRIDES
TANTALUM
TANTALUM NITRIDES
TITANIUM NITRIDES
TUNGSTEN