Barrier/Cu contact resistivity
Abstract
The specific contact resistivity of Cu with ({alpha} + {beta})-Ta, TiN, {alpha}-W, and amorphous-Ta{sub 36}Si{sub 14}N{sub 50} barrier films is measured using a novel four-point-probe approach. Geometrically, the test structures consist of colinear sets of W-plugs to act as current and voltage probes that contact the bottom of a planar Cu/barrier/Cu stack. Underlying Al interconnects link the plugs to the current source and voltmeter. The center-to-center distance of the probes ranges from 3 to 200 {micro}m. Using a relation developed by Vu et al., a contact resistivity of roughly 7 {times} 10{sup {minus}9} {Omega} cm{sup 2} is obtained for all tested barrier/Cu combinations. By reflective-mode small-angle X-ray scattering, the similarity in contact resistivity among the barrier films may be related to interfacial impurities absorbed from the deposition process.
- Authors:
-
- California Inst. of Tech., Pasadena, CA (United States)
- Cornell Univ., Ithaca, NY (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- OSTI Identifier:
- 119996
- Report Number(s):
- SAND-95-2328C; CONF-9510161-2
ON: DE96001731; TRN: AHC29527%%139
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Technical Report
- Resource Relation:
- Conference: Advanced metalization and interconnect systems for ultra large scale integration applications, Portland, OR (United States), 3-5 Oct 1995; Other Information: PBD: 17 Oct 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; INTEGRATED CIRCUITS; FABRICATION; COPPER; ELECTRIC CONDUCTIVITY; TANTALUM; TITANIUM NITRIDES; TUNGSTEN; TANTALUM NITRIDES; SILICON NITRIDES; ELECTRIC CONTACTS; ALUMINIUM; INTERFACES; LAYERS; EXPERIMENTAL DATA; LEAST SQUARE FIT
Citation Formats
Reid, J S, Nicolet, M A, Angyal, M S, Lilienfeld, D, Shacham-Diamand, Y, and Smith, P M. Barrier/Cu contact resistivity. United States: N. p., 1995.
Web. doi:10.2172/119996.
Reid, J S, Nicolet, M A, Angyal, M S, Lilienfeld, D, Shacham-Diamand, Y, & Smith, P M. Barrier/Cu contact resistivity. United States. https://doi.org/10.2172/119996
Reid, J S, Nicolet, M A, Angyal, M S, Lilienfeld, D, Shacham-Diamand, Y, and Smith, P M. 1995.
"Barrier/Cu contact resistivity". United States. https://doi.org/10.2172/119996. https://www.osti.gov/servlets/purl/119996.
@article{osti_119996,
title = {Barrier/Cu contact resistivity},
author = {Reid, J S and Nicolet, M A and Angyal, M S and Lilienfeld, D and Shacham-Diamand, Y and Smith, P M},
abstractNote = {The specific contact resistivity of Cu with ({alpha} + {beta})-Ta, TiN, {alpha}-W, and amorphous-Ta{sub 36}Si{sub 14}N{sub 50} barrier films is measured using a novel four-point-probe approach. Geometrically, the test structures consist of colinear sets of W-plugs to act as current and voltage probes that contact the bottom of a planar Cu/barrier/Cu stack. Underlying Al interconnects link the plugs to the current source and voltmeter. The center-to-center distance of the probes ranges from 3 to 200 {micro}m. Using a relation developed by Vu et al., a contact resistivity of roughly 7 {times} 10{sup {minus}9} {Omega} cm{sup 2} is obtained for all tested barrier/Cu combinations. By reflective-mode small-angle X-ray scattering, the similarity in contact resistivity among the barrier films may be related to interfacial impurities absorbed from the deposition process.},
doi = {10.2172/119996},
url = {https://www.osti.gov/biblio/119996},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 17 00:00:00 EDT 1995},
month = {Tue Oct 17 00:00:00 EDT 1995}
}