The Seebeck Coefficient and Phonon Drag in Silicon

Mahan, Gerald; Lindsay, Lucas R.; Broido, David

doi:10.1063/1.4904925

The Seebeck Coefficient and Phonon Drag in Silicon

Journal Article · Sun Dec 28 23:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4904925· OSTI ID:1185754

Mahan, Gerald ^[1]; Lindsay, Lucas R. ^[2]; Broido, David ^[3]

Pennsylvania State Univ., University Park, PA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Boston College, Chestnut Hill, MA (United States)

We present a theory of the phonon-drag Seebeck coe cient in nondegenerate semiconductors, and apply it to silicon for temperatures 30 < T < 300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We nd excellent agreement with the measurements of Geballe and Hull [Phys.Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1185754

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 116; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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