Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

doi:10.7567/JJAP.54.042402

Title: Spectroscopic determination of the bandgap crossover composition in MBE-grown Al_xGa_1-xAs

Journal Article · Thu Mar 12 00:00:00 EDT 2015 · Japanese Journal of Applied Physics

DOI:https://doi.org/10.7567/JJAP.54.042402· OSTI ID:1184998

Fluegel, Brian ^[1]; Alberi, Kirstin ^[1]; Reno, John ^[2]; Mascarenhas, Angelo ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy Al_xGa_1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1184998

Report Number(s):: SAND-2014-20322J; 547684

Journal Information:: Japanese Journal of Applied Physics, Vol. 54, Issue 4; ISSN 0021-4922

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (13)

Photoluminescence of Al _x Ga _1-x As near the Γ-X crossover Oelgart, G.; Schwabe, R.; Heider, M. Semiconductor Science and Technology, Vol. 2, Issue 7 https://doi.org/10.1088/0268-1242/2/7/015	journal	July 1987
Dependence of the Al _x Ga _{1− x} As band edge on alloy composition based on the absolute measurement of x Kuech, T. F.; Wolford, D. J.; Potemski, R. Applied Physics Letters, Vol. 51, Issue 7 https://doi.org/10.1063/1.98380	journal	August 1987
Direct-energy-gap dependence on Al concentration in ${Al}_{x}$ ${Ga}_{1 - x}$ As Bosio, C.; Staehli, J. L.; Guzzi, M. Physical Review B, Vol. 38, Issue 5 https://doi.org/10.1103/PhysRevB.38.3263	journal	August 1988
Indirect-energy-gap dependence on Al concentration in ${Al}_{x}$ ${Ga}_{1 - x}$ As alloys Guzzi, M.; Grilli, E.; Oggioni, S. Physical Review B, Vol. 45, Issue 19 https://doi.org/10.1103/PhysRevB.45.10951	journal	May 1992
Photoluminescence of Al _x Ga _{1− x} As alloys Pavesi, Lorenzo; Guzzi, Mario Journal of Applied Physics, Vol. 75, Issue 10 https://doi.org/10.1063/1.355769	journal	May 1994
Resonant Inelastic Light Scattering Investigation of Low-Lying Gapped Excitations in the Quantum Fluid at $ν = 5 / 2$ Wurstbauer, U.; West, K. W.; Pfeiffer, L. N. Physical Review Letters, Vol. 110, Issue 2 https://doi.org/10.1103/PhysRevLett.110.026801	journal	January 2013
Precise Determination of the Direct–Indirect Band Gap Energy Crossover Composition in Al _x Ga _{1- x} As Beaton, Daniel A.; Alberi, Kirstin; Fluegel, Brian Applied Physics Express, Vol. 6, Issue 7 https://doi.org/10.7567/APEX.6.071201	journal	July 2013
Defect‐related emissions in photoluminescence spectra of Al _x Ga ₁ _{− x} As grown by molecular beam epitaxy Mihara, M.; Nomura, Y.; Mannoh, M. Journal of Applied Physics, Vol. 55, Issue 10 https://doi.org/10.1063/1.332931	journal	May 1984
Photoluminescence properties of Al _x Ga _1-x As and an investigation of a new 1.951 eV transition Lochs, H. G. M.; Olsthoorn, S. M.; Huijgen, T. P. Journal of Physics: Condensed Matter, Vol. 3, Issue 37 https://doi.org/10.1088/0953-8984/3/37/010	journal	September 1991
Low‐temperature photoluminescence in Al _x Ga _{1− x} As grown by molecular beam epitaxy Reynolds, D. C.; Bajaj, K. K.; Litton, C. W. Journal of Applied Physics, Vol. 58, Issue 4 https://doi.org/10.1063/1.336054	journal	August 1985
Luminescence and Excitation Spectra of Exciton Emission in GaAs Heim, U.; Hiesinger, P. physica status solidi (b), Vol. 66, Issue 2 https://doi.org/10.1002/pssb.2220660208	journal	December 1974
Effect of biaxial strain on exciton transitions of Al _x Ga _{1− x} As epitaxial layers on (001) GaAs substrates Logothetidis, S.; Cardona, M.; Tapfer, L. Journal of Applied Physics, Vol. 66, Issue 5 https://doi.org/10.1063/1.344304	journal	September 1989
Low-temperature optical absorption in ${Al}_{x}$ ${Ga}_{1 - x}$ As grown by molecular-beam epitaxy Pearah, P. J.; Masselink, W. T.; Klem, J. Physical Review B, Vol. 32, Issue 6 https://doi.org/10.1103/PhysRevB.32.3857	journal	September 1985

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Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures Barkissy, D.; Nafidi, A.; Boutramine, A. Journal of Low Temperature Physics, Vol. 182, Issue 5-6 https://doi.org/10.1007/s10909-015-1437-0	journal	January 2016

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