Defect reaction network in Si-doped InAs. Numerical predictions.

Technical Report · Fri May 01 00:00:00 EDT 2015

DOI:https://doi.org/10.2172/1182682· OSTI ID:1182682

Schultz, Peter A. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1182682
• Report Number(s): SAND2015-3850; 583974
• Country of Publication: United States
• Language: English