skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1180234
Grant/Contract Number:
AC02-98CH10886
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 2; Journal Issue: 6; Related Information: CHORUS Timestamp: 2016-12-23 14:15:52; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Walsh, Lee A., Hughes, Greg, Weiland, Conan, Woicik, Joseph C., Lee, Rinus T. P., Loh, Wei-Yip, Lysaght, Pat, and Hobbs, Chris. Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy. United States: N. p., 2014. Web. doi:10.1103/PhysRevApplied.2.064010.
Walsh, Lee A., Hughes, Greg, Weiland, Conan, Woicik, Joseph C., Lee, Rinus T. P., Loh, Wei-Yip, Lysaght, Pat, & Hobbs, Chris. Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy. United States. doi:10.1103/PhysRevApplied.2.064010.
Walsh, Lee A., Hughes, Greg, Weiland, Conan, Woicik, Joseph C., Lee, Rinus T. P., Loh, Wei-Yip, Lysaght, Pat, and Hobbs, Chris. Tue . "Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy". United States. doi:10.1103/PhysRevApplied.2.064010.
@article{osti_1180234,
title = {Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy},
author = {Walsh, Lee A. and Hughes, Greg and Weiland, Conan and Woicik, Joseph C. and Lee, Rinus T. P. and Loh, Wei-Yip and Lysaght, Pat and Hobbs, Chris},
abstractNote = {},
doi = {10.1103/PhysRevApplied.2.064010},
journal = {Physical Review Applied},
number = 6,
volume = 2,
place = {United States},
year = {Tue Dec 30 00:00:00 EST 2014},
month = {Tue Dec 30 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevApplied.2.064010

Citation Metrics:
Cited by: 5works
Citation information provided by
Web of Science

Save / Share:
  • By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga{sub 2}O{sub 3} were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga{sub 2}O{sub 3}.
  • Photoelectron spectroscopy and diffraction have been used to investigate structural changes during the annealing process of Ga{sub 1-x}Mn{sub x}As samples. Hard x-ray radiation helped in observing photoelectron core-level spectra and electron diffraction from the bulk underlying the oxidized surface layer. High electron-energy resolution enabled us to separate the components due to substitutional and interstitial Mn atoms in the intrinsic Mn 2p{sub 3/2} photoemission profile, resulting in two peaks at 638.8 and 639.5 eV binding energy, respectively. The peaks display the known characteristic behavior after annealing, that is, an almost complete reduction of the interstitial component and preservation of the substitutionalmore » component. In the photoelectron diffraction, a sensitivity of high-energy polar plots to the incorporation sites of photoemitting atoms into the atomic lattice has been shown. As a consequence, the experimental polar plots from substitutional and interstitial Mn atoms, which are supported theoretically, show characteristic features that provide structural information. From the similarities and differences of the polar plots for Mn and Ga, we have confirmed the assignment of components within the intrinsic part of the photoemission Mn 2p{sub 3/2} signal suggested by photoelectron spectroscopy.« less
  • The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that bandmore » bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.« less
  • Hard x-ray photoelectron spectroscopy (HAXPES) was performed on In{sub 0.53}Ga{sub 0.47}As/Al{sub 2}O{sub 3} gate stacks as deposited and annealed at 400 Degree-Sign C, 500 Degree-Sign C, and 700 Degree-Sign C to test for out-diffusion of substrate elements. Ga and As core-level intensities increase with increasing anneal temperature, while the In intensity decreases. HAXPES was performed at two different beam energies to vary the surface sensitivity; results demonstrate Ga and As out-diffuse into the Al{sub 2}O{sub 3} film. Analysis suggests the presence of an interlayer containing Ga and As oxides, which thickens with increasing anneal temperature. Further diffusion, especially of Ga,more » into the Al{sub 2}O{sub 3} film is also observed with increasing anneal temperature.« less