Layered CU-based electrode for high-dielectric constant oxide thin film-based devices
Patent
·
OSTI ID:1176291
A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31-109-ENG-38
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 7,714,405
- Application Number:
- 11/073,263
- OSTI ID:
- 1176291
- Country of Publication:
- United States
- Language:
- English
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