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Title: Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

Abstract

A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

Inventors:
;
Publication Date:
Research Org.:
Univ. of Central Florida, Orlando, FL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176200
Patent Number(s):
7,632,701
Application Number:
11/745,621
Assignee:
University Of Central Florida OSTI
DOE Contract Number:  
XXL-5-44205-08
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Dhere, Neelkanth G., and Kadam, Ankur A. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor. United States: N. p., 2009. Web.
Dhere, Neelkanth G., & Kadam, Ankur A. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor. United States.
Dhere, Neelkanth G., and Kadam, Ankur A. Tue . "Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor". United States. doi:. https://www.osti.gov/servlets/purl/1176200.
@article{osti_1176200,
title = {Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor},
author = {Dhere, Neelkanth G. and Kadam, Ankur A.},
abstractNote = {A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2009},
month = {Tue Dec 15 00:00:00 EST 2009}
}

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