Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
Patent
·
OSTI ID:1176200
A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.
- Research Organization:
- Univ. of Central Florida, Orlando, FL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- XXL-5-44205-08
- Assignee:
- University Of Central Florida
- Patent Number(s):
- 7,632,701
- Application Number:
- 11/745,621
- OSTI ID:
- 1176200
- Country of Publication:
- United States
- Language:
- English
Selenium- and tellurium-centred radicals
|
journal | December 1993 |
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